SSO-AD-500NIR-TO52-S1 数据手册
SSO-AD-500 NIR-TO52-S1
Avalanche Photodiode NIR
Special characteristics:
quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve
Parameters:
active area dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR (at ID=2µA) Temperature coefficient of UBR Spectral responsivity (at 780 nm) Cut-off frequency (-3dB) Rise time Optimum gain Gain M "Exess Noise" factor (M=100) "Exess Noise" index (M=100) Noise current (M=100) N.E.P. (M=100, 880 nm) Operating temperature Storage temperature 50 - 60 min 200
1)
Package (TO52 S1) :
0,196 mm ∅ 500 µm max. 5 nA typ. 0,5 - 1 nA typ. 1,2 pF 120 - 300 V typ. 0,55 %/°C min. 0,55 A/W typ. 0,60 A/W 400 MHz 550 MHz 550 ps 300 ps
2
typ. 2,5 typ. 0,2 typ. 1 pA/Hz
½
typ. 2 * 10 W/Hz -20 ... +70°C -60 ... +100°C
-14
½
1) measurement conditions: Setup of photo current 10nA at M=1 and irradiation by a NIR-LED (880 nm, 80 nm bandwith). Rise of the photo current up to 1 µA, (M=100) by internal multiplication due to an increasing bias voltage.
SSO-AD-series Spectral Responsivity at M=1 0,700 0,600 0,500
Sabs (A/W)
Sabs (A/W)
70,00 60,00 50,00 40,00 30,00 20,00 10,00 0,00
SSO-AD-series Spectral Responsivity at M=100
0,400 0,300 0,200 0,100 0,000
400 500 600 700 800 900 1000
1100
400
500
600
700
800
900
1000
1100
Wavelength (nm)
Wavelength (nm)
SSO-AD-series QE for M=100
100,0 90,0 80,0 70,0 60,0
QE
50,0 40,0 30,0 20,0 10,0 0,0 400 500 600 700 800 900 1000 1100
Wavelength (nm)
SSO-AD 500 Id = f(Ur/Ubr)
10,000
SSO-AD 500 gain= f(Ur/Ubr)
1000,00
1,000
Id [nA]
100,00
0,100
M
10,00 0,010 0,001 0,000 0,100 0,200 0,300 0,400 0,500 0,600 0,700 0,800 0,900 1,000 1,00 0,000 0,100 0,200 0,300 0,400 0,500 0,600 0,700 0,800 0,900 1,000
Ur/Ubr
Ur/Ubr
Maximum Ratings:
• • • • max. electrical power dissipation max. optical peak value, once max. continous optical operation ( Pelectr. = Popt. * Sabs * M * UR ) 100 mW at 22°C 200 mW for 1 s IPh (DC) ≤ 250 µA ≤ 1 mA for signal 50 µs "on" / 1 ms "out"
Bias supply voltage
Current limiting resistor
Application hints:
• • • • • • • Current limit is to be realized via protecting resistor or current limiting - IC inside the supply voltage. Use of low noise read-out - IC. For higher gain a regulation of bias voltage due to the temperature is to be realized. For very small signals stray light (noise source) is to be excluded by filters in order to improve the signal-noise relation. Avoid touching the window with fingers! Careful cleaning with Ethyl alcohol possible. Avoid use of pointed and scratching tools!
min. 0,1 µF, closest to APD APD
Diode, protective circuit
Read-out circuit or f.e. 50Ω Load resistance
Handling precautions:
• • • Soldering temperature min. Pin - length ESD - protection Storage 260°C for max. 10 s. The device must be protected against solder flux vapour! 2mm Only small danger for the device. Standard precautionary measures are sufficient. Store devices in conductive foam.
2000/12
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