JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
2N7002T
MOSFET (N-Channel)
V(BR)DSS
ID
RDS(on)MAX
SOT-523
3
5Ω@10V
60 V
115mA
7Ω@5V
1. GATE
2. SOURCE
3. DRAIN
1
2
APPLICATION
Load Switch for Portable Devices
z DC/DC Converter
FEATURE
High density cell design for low RDS(ON)
z
Voltage controlled small signal switch
z
z
Rugged and reliable
z
High saturation current capability
z
MARKING
Equivalent Circuit
K72
K72= Device Code
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VDS
Drain-Source voltage
60
V
VGS
Gate-Source voltage
±20
V
ID
PD
Drain Current
115
mA
Power Dissipation
150
mW
Thermal Resistance from Junction to Ambient 833
℃/W
RθJA
TJ
Junction Temperature
Tstg
Storage Temperature
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℃
150
-55~+150
1
℃
Rev - 1.0
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)DSS
VGS=0 V, ID=250 µA
60
Vth(GS)
VDS=VGS, ID=250 µA
1
Gate-body Leakage
lGSS
VDS=0 V, VGS=±20 V
±80
nA
Zero Gate Voltage Drain Current
IDSS
VDS=60 V, VGS=0 V
80
nA
On-state Drain Current
ID(ON)
VGS=10 V, VDS=7 V
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistance
RDS(on)
Forward Trans conductance
gfs
Drain-source on-voltage
VDS(on)
Diode Forward Voltage
VSD
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
2.5
500
V
mA
VGS=10 V, ID=500mA
5
VGS=5 V, ID=50mA
7
500
ms
VGS=10V, ID=500mA
3.75
V
VGS=5V, ID=50mA
0.375
V
1.2
V
VDS=10 V, ID=200mA
IS=115mA, VGS=0 V
80
Ω
0.55
50
VDS=25V, VGS=0V, f=1MHz
25
pF
5
SWITCHING TIME
Turn-on Time
td(on)
Turn-off Time
td(off)
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VDD=25 V, RL=50Ω
ID=500mA,VGEN=10 V
RG=25 Ω
2
20
ns
40
Rev - 1.0
Typical Characteristics
Transfer Characteristics
Output Characteristics
1.4
1.0
Ta=25℃ VGS=10V,9V,8V,7V,6V
1.2
Ta=25℃
VGS=5V
Pulsed
Pulsed
(A)
ID
0.8
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
0.8
1.0
VGS=4V
0.6
0.4
0.0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
0.4
0.2
VGS=3V
0.2
0.6
0.0
5
0
2
4
6
GATE TO SOURCE VOLTAGE
(V)
RDS(ON) —— ID
3
RDS(ON) ——
6
VGS
(V)
VGS
Ta=25℃
Ta=25℃
Pulsed
RDS(ON)
2
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
( Ω)
( Ω)
Pulsed
VGS=5V
1
VGS=10V
0
0.0
0.2
0.4
0.6
DRAIN CURRENT
0.8
ID
4
ID=500mA
2
0
1.0
ID=50mA
0
6
GATE TO SOURCE VOLTAGE
(A)
12
VGS
18
(V)
IS —— VSD
2
Ta=25℃
SOURCE CURRENT
IS (A)
1
Pulsed
0.3
0.1
0.03
0.01
3E-3
1E-3
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
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1.2
1.4
VSD (V)
3
Rev - 1.0
6273DFNDJH2XWOLQH'LPHQVLRQV
Symbol
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min.
Max.
0.700
0.900
0.000
0.100
0.700
0.800
0.150
0.250
0.250
0.350
0.100
0.200
1.500
1.700
0.700
0.900
1.450
1.750
0.500 TYP.
0.900
1.100
0.400 REF.
0.260
0.460
0°
8°
Dimensions In Inches
Min.
Max.
0.028
0.035
0.000
0.004
0.028
0.031
0.006
0.010
0.010
0.014
0.004
0.008
0.059
0.067
0.028
0.035
0.057
0.069
0.020 TYP.
0.035
0.043
0.016 REF.
0.010
0.018
0°
8°
627 6XJJHVWHG3DG/D\RXW
NOTICE
JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
changes without further notice to any product herein. JSCJ does not assume any liability arising
out of the application or use of any product described herein.
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4
Rev - 1.0
6277DSHDQG5HHO
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5
Rev - 1.0
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