JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
2SA1213
TRANSISTOR (PNP)
1. BASE
FEATURES
z Complementary to 2SC2873
z Small Flat Package
z Power Amplifier and Switching Applications
z Low Saturation Voltage
z High Speed Switching Time
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-2
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC= -0.1mA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-0.1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-50V,IE=0
-100
nA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-100
nA
DC current gain
hFE
VCE=-2V, IC=-500mA
70
VCE=-2V, IC=-2A
20
240
Collector-emitter saturation voltage
VCE(sat)
IC=-1A,IB=-50mA
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-1A,IB=-50mA
-1.2
V
Cob
Collector output capacitance
fT
Transition frequency
40
VCB=-10V,IE=0, f=1MHz
VCE=-2V,IC= -0.5A
100
pF
MHz
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
70–140
120–240
MARKING
NO
NY
A,Nov,2010
Typical Characterisitics
2SA1213
Static Characteristic
-1000
-5.4mA
-800
IC
COMMON EMITTER
VCE=-2V
300
-3.6mA
-600
-3mA
-2.4mA
-400
-1.8mA
-1.2mA
-200
Ta=100 ℃
hFE
-4.2mA
DC CURRENT GAIN
COLLECTOR CURRENT
——
-4.8mA
IC
(mA)
-6mA
hFE
1000
COMMON
EMITTER
Ta=25 ℃
Ta=25 ℃
100
30
IB=-600uA
-0
-0.0
10
-0.5
-1.0
-1.5
-2.0
-2.5
COLLECTOR-EMITTER VOLTAGE
——
-3.5
IC
β=20
-10
-3
COLLECTOR CURRENT
IC
-1000
——
-300
-100
-30
-10
IC
-100
-30
VCEsat
-1000
Ta=100 ℃
-200
-1
-3
COLLECTOR CURRENT
Ta=25 ℃
BASE-EMMITTER SATURATION
VOLTAGE VBEsat (mV)
-1
(V)
COLLECTOR-EMMITTER SATURATION
VOLTAGE VCEsat (mV)
VBEsat
-1000
VCE
-3.0
——
-2000
(mA)
IC
-300
-100
Ta=100 ℃
-30
Ta=25 ℃
β=20
-10
-1000
-1
-3
-30
-10
Cob/Cib
1000
——
-300
-100
COLLECTOR CURRENT
(mA)
VBE
-1000
-500
IC
IC
-1000
(mA)
VCB/VEB
f=1MHz
IE=0/IC=0
-300
(pF)
Ta=100 ℃
-30
Ta=25 ℃
-10
100
Cob
30
-3
-1
-0.0
VCE=-2V
-0.2
-0.4
-0.6
BASE-EMITTER VOLTAGE
PC
600
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
C
-100
CAPACITANCE
COLLECTOR CURRENT
IC
(mA)
Ta=25 ℃
300
——
-0.8
VBE
-1.0
10
-0.1
-0.3
-1
-10
-3
REVERSE VOLTAGE
(V)
V
-20
(V)
Ta
500
400
300
200
100
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
A,Nov,2010
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