2SB1184

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1184 TO-252-2L TRANSISTOR (PNP) FEATURES z Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) z Complements the 2SD1760 / 2SD1864. 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter Value Unit VCBO Collector Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -3 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ Parameter 2. COLLECTOR unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 -1 µA DC current gain hFE(1) VCE=-3V, IC=-0.5A 82 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB=-0.2A Base-emitter saturation voltage VBE(sat) IC=-1.5A, IB=-0.15A fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range 390 -1 V -1.2 V VCE=-5V, IC=-0.5A, f=30MHz 70 MHz VCB=-10V, IE=0, f=1MHz 50 pF hFE(1) P Q R 82-180 120-270 180-390 Marking www.cj-elec.com 1 C,Nov,2014 Typical Characteristics hFE —— IC Static Characteristic 1000 -1.0 COMMON EMITTER Ta=25℃ (A) -0.8 VCE= -3V 5mA o IC DC CURRENT GAIN COLLECTOR CURRENT 4mA -0.6 3.5mA 3mA 2.5mA -0.4 Ta=100 C hFE 4.5mA 2mA o Ta=25 C 100 1.5mA -0.2 1mA IB=0.5mA -0.0 -0 -1 -2 -3 -4 -5 -6 -7 COLLECTOR-EMITTER VOLTAGE -8 VCE -9 10 -10 -1 VBEsat —— IC -1200 -100 VCEsat —— -1000 β=10 -3000 -1000 IC (mA) IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) β=10 -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -10 COLLECTOR CURRENT (V) -800 Ta=25℃ -600 Ta=100℃ -400 -200 -0 -0.1 -1 -10 -100 COLLECTOR CURRENT IC -1000 -800 -600 Ta=100℃ -400 Ta=25℃ -200 -0 -100 -3000 -1000 COLLECTOR CURRENT (mA) IC —— VBE 3000 Cob / Cib —— IC -3000 (mA) VCB / VEB VCE=-3V -1000 f=1MHz IE=0 / IC=0 1000 IC (mA) o (pF) Ta=25 C Cib C o Ta=100 C o Ta=25 C CAPACITANCE COLLECTOR CURRENT -100 -10 100 Cob -1 -0.1 -200 -400 -600 -800 BASE-EMITTER VOLTAGE Pc COLLECTOR POWER DISSIPATION Pc (mW) 1200 —— 10 -0.1 -1000 -1 REVERSE VOLTAGE VBE(mV) -10 V -20 (V) Ta 1000 800 600 400 200 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃ ) 2 C,Nov,2014 Symbol A A1 B b c c1 D D1 E e e1 M N L L1 L2 V ĭ www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.380 0.000 0.100 0.800 1.400 0.710 0.810 0.460 0.560 0.460 0.560 6.500 6.700 5.130 5.460 6.000 6.200 2.286 TYP. 4.327 4.727 1.778REF. 0.762REF. 9.800 10.400 2.9REF. 1.400 1.700 4.830 REF.   3 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.004 0.031 0.055 0.028 0.032 0.018 0.022 0.018 0.022 0.256 0.264 0.202 0.215 0.236 0.244 0.090 TYP. 0.170 0.186 0.070REF. 0.018REF. 0.386 0.409 0.114REF. 0.055 0.067 0.190 REF.   C,Nov,2014 To-252(4R)-2L Tape and Reel www.cj-elec.com 4 C,Nov,2014