2SB1424

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1424 TRANSISTOR (PNP) 1. BASE FEATURES    Excellent DC current gain Low collector-emitter saturation voltage Complement the 2SD2150 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-50µA,IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA,IC=0 -6 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 µA DC current gain hFE VCE=-2V, IC=-0.1A Collector-emitter saturation voltage Collector output capacitance VCE(sat) Cob fT Transition frequency 120 390 IC=-2A,IB=-0.1A VCB=-10V,IE=0, f=1MHz VCE=-2V,IC=-0.5A, f=100MHz -0.5 V 35 pF 240 MHz CLASSIFICATION OF hFE RANK Q R RANGE 120–270 180–390 MARKING AEQ AER B,Nov,2011 Typical Characteristics IC -500 —— VCE COMMON EMITTER Ta=25℃ COMMON EMITTER VCE=-2V hFE Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT -1.05mA -0.9mA -0.75mA -200 IC —— Ta=100℃ -1.2mA IC (mA) -1.35mA -300 hFE 1000 -1.5mA -400 2SB1424 -0.6mA -0.45mA 100 -0.3mA -100 IB=-0.15mA -0 10 -0 -1 -2 -3 -4 COLLECTOR-EMITTER VOLTAGE VCEsat -6 -1 -10 -100 VBEsat —— IC —— -1000 COLLECTOR CURRENT IC -3000 (mA) IC -2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 -5 VCE (V) -100 Ta=100 ℃ -1000 Ta=25℃ Ta=100 ℃ Ta=25℃ β=20 -10 -1 -10 -100 COLLECTOR CURRENT IC —— -1000 IC β=20 -100 -1 -3000 (mA) VBE fT —— IC -3000 (mA) IC (MHz) 100 fT (mA) TRANSITION FREQUENCY T =2 5℃ a T =1 00℃ a IC -100 -10 COMMON EMITTER VCE=-2V -1 -0.0 -0.3 -0.6 -0.9 COMMON EMITTER VCE= -2V Ta=25℃ 10 -1.2 -7 -10 BASE-EMMITER VOLTAGE VBE (V) 1000 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cob CT —— IC (mA) Ta 500 100 10 1 -0.1 PC 600 Ta=25 ℃ Cib -100 COLLECTOR CURRENT f=1MHz IE=0/IC=0 (pF) -1000 200 -1000 CAPACITANCE -100 COLLECTOR CURRENT -3000 COLLECTOR CURRENT -10 400 300 200 100 0 -1 REVERSE VOLTAGE -10 V (V) -20 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta 150 (℃ ) B,Nov,2011