2SC1318-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1318 TO – 92 TRANSISTOR (NPN) FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat) z Complementary Pair with 2SA720 1. EMITTER 2. COLLECTOR 3. BASE  C1318 z XXX Equivalent Circuit C1318 'HYLFHFRGH  Solid dot=Green molding compound device, if none,the normal device ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2SC1318 TO-92 Bulk 1000pcs/Bag 2SC1318-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 7 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW Thermal Resistance From Junction To Ambient 200 ℃ /W -55~+150 ℃ R θ JA TJ,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 0.01mA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=0.01mA,IC=0 7 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V,IC=0 0.1 μA hFE(1) VCE=10V, IC=150mA 85 hFE(2) VCE=10V, IC=500mA 40 Collector-emitter saturation voltage VCE(sat) IC=300mA,IB=30mA 0.6 V Base-emitter saturation voltage VBE (sat) IC=300mA,IB=30mA 1.5 V VCB=10V,IE=0, f=1MHz 15 pF DC current gain Collector output capacitance Cob Transition frequency fT VCE=10V,IC=50mA, f=200MHz 340 200 MHz CLASSIFICATION OF hFE(1) RANK Q RANGE www.jscj-elec.com 85-170 2 R S 120-240 170-340 Rev. - 2.0 Typical Characteristics Static Characteristic 0.9mA 150 DC CURRENT GAIN 0.8mA IC IC Ta=100℃ hFE (mA) 200 —— COMMON EMITTER Ta=25℃ 1mA COLLECTOR CURRENT hFE 1000 250 0.7mA 0.6mA 100 0.5mA 0.4mA Ta=25℃ 100 0.3mA 50 0.2mA COMMON EMITTER VCE= 10V IB=0.1mA 0 10 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 20 24 1 —— IC (mA) IC 300 β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 500 100 VCEsat IC β=10 Ta=25℃ 600 Ta=100 ℃ 400 200 0 0.1 1 10 IC —— IC 100 Ta=100 ℃ Ta=25℃ 10 0.1 500 100 COLLECTOR CURREMT 1 10 COLLECTOR CURREMT (mA) VBE fT 1000 500 (mA) IC Ta=25℃ TRANSITION FREQUENCY 10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT 100 —— 100 IC COMMON EMITTER VCE=10V (MHz) 500 (mA) 10 COLLECTOR CURRENT VCE (V) 1 COMMON EMITTER VCE=10V 0.1 0.0 100 10 0.3 0.6 0.9 1.2 1 10 —— VCB/VEB f=1MHz IE=0/IC=0 Cib 100 CAPACITANCE C (pF) Ta=25 ℃ Cob 10 1 0.1 —— IC (mA) Ta 625 500 375 250 125 0 1 REVERSE VOLTAGE www.jscj-elec.com PC 750 COLLECTOR POWER DISSIPATION PC (mW) Cob/Cib 200 100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) 10 V 0 30 25 50 75 AMBIENT TEMPERATURE (V) 3 100 Ta 125 150 (℃ ) Rev. - 2.0 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 TO-92 7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0