2SC2655

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC(T 2SC2655 TRANSISTOR (NPN) TO-92L FEATURES Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) High Speed Switching Time: tstg=1μs(Typ.) z Complementary to 2SA1020 z 1.EMITTER z 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Symbol Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 2 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 1 μA Emitter cut-off current IEBO VEB=5V,IC=0 1 μA hFE(1) VCE=2V,IC=500mA 70 hFE(2) VCE=2V,IC=1.5A 40 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=0.05A 0.5 V Base-emitter saturation voltage VBE(sat) IC=1A,IB=0.05A 1.2 V fT VCE=2V,IC=0.5A 100 MHz VCB=10V,IE=0,f=1MHz 30 pF DC current gain Transition frequency Collector output capacitance Switch time Cob Tune on Time ton Storage Time tstg Fall Time VCC=30V,Ic=1A, IB1=-IB2=0.05A tf 240 0.15 2 μs 0.15 CLASSIFICATION OF hFE(1) Rank Range www.cj-elec.com O Y 70-140 120-240 1 C,Oct,2014 Typical Characteristics hFE Static Characteristic 400 COMMON EMITTER Ta=25℃ COMMON EMITTER VCE=2V 1.0 4.5mA 0.8 3.5mA hFE 3mA (A) 4mA IC COLLECTOR CURRENT —— IC 5mA DC CURRENT GAIN 1.2 0.6 300 2.5mA 2mA 0.4 1.5mA Ta=100℃ 200 Ta=25℃ 100 1mA 0.2 IB=0.5mA 0.0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 0.4 —— VCE 0 0.01 10 (V) 0.1 1 COLLECTOR CURRENT IC VBEsat 1.2 —— IC 2 (A) IC Ta=25℃ 0.3 0.2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=20 Ta=100℃ 0.1 Ta=25℃ 0.8 Ta=100℃ 0.4 β=20 0.0 0.01 0.1 1 COLLECTOR CURRENT IC 2 IC 0.0 0.01 2 (A) 0.1 1 COLLECTOR CURRENT —— VBE 1000 Cob/ Cib IC —— VCB/ VEB COMMON EMITTER VCE=2V 1 f=1MHz IE=0/ IC=0 Cib Ta=25℃ (pF) (A) IC Ta=25℃ 0.1 0.01 0.2 0.4 100 Cob C CAPACITANCE COLLECTOR CURRENT Ta=100℃ 2 (A) 0.6 0.8 1.0 1 0.1 1.2 BASE-EMMITER VOLTAGE VBE (V) Pc —— 10 1 REVERSE VOLTAGE 10 V 20 (V) Ta COLLECTOR POWER DISSIPATION Pc (mW) 1000 800 600 400 200 0 0 25 50 75 AMBIENT TEMPERATURE www.cj-elec.com 100 Ta 125 150 (℃) 2 C,Oct,2014 Symbol A A1 b b1 c D D1 E e e1 L Φ h www.cj-elec.com 3 Dimensions In Millimeters Min. Max. 3.750 4.050 1.280 1.580 0.380 0.550 0.620 0.780 0.350 0.450 4.750 5.050 4.000 7.850 8.150 1.270 TYP. 2.440 2.640 13.800 14.200 1.600 0.000 0.300 Dimensions In Inches Min. Max. 0.148 0.159 0.050 0.062 0.015 0.022 0.024 0.031 0.014 0.018 0.187 0.199 0.157 0.309 0.321 0.050 TYP. 0.096 0.104 0.543 0.559 0.063 0.000 0.012 C,Oct,2014 www.cj-elec.com 4 C,Oct,2014