2SC4115

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements to 2SA1585 1. BASE 1 2 2. COLLECTOR 3 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO 6 V IC Emitter-Base Voltage Collector Current -Continuous 3 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 Storage Temperature -55~150 ℃ Tstg VCBO ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= 50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 6 V Collector cut-off current ICBO VCB=30V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA DC current gain hFE VCE=2V, IC= 0.1A VCE(sat) IC= 2A, IB=0.1A fT VCE=2V, IC=0.5 A F=100MHz Collector-emitter saturation voltage* Transition frequency Min Typ 120 Max 560 0.5 200 Unit 290 V MHz *pulse test CLASSIFICATION OF hFE Rank Q R S Range 120-270 180-390 270-560 marking 4115Q 4115R 4115S A,Jun,2011