3DD13003B-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistor 3DD13003B TRANSISTOR( NPN ) TO-92 FEATURES 1. EMITTER · power switching applications 2. COLLECTOR 3. BASE  % z Equivalent Circuit 13003B 'HYLFHFRGH  Solid dot=Green molding compound device, XXX if none,the normal device ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method 3DD13003B TO-92 Bulk 1000pcs/Bag 3DD13003B-TA TO-92 Tape 2000pcs/Box Pack Quantity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.9 W TJ,Tstg Operation Junction and Storage Temperature Range -55 ~150 ℃ www.jscj-elec.com 1 Rev. - 2.1  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 100 µA Collector cut-off current ICEO VCE= 400V, IB=0 50 µA Emitter cut-off current IEBO VEB= 7V, IC=0 10 µA DC current gain hFE VCE= 10V, IC= 0.4 A Collector-emitter saturation voltage Base-emitter saturation voltage 20 40 VCE(sat)1 IC=1.5A,IB= 0.5A 3 V VCE(sat)2 IC=0.5A, IB= 0.1A 0.8 V VBE(sat) IC=0.5A, IB=0.1A 1 V Transition Frequency fT VCE=10V,IC=100mA, f =1MHz Fall time tf IC=1A Storage time ts IB1=-IB2=0.2A 4 MHz 0.7 µs 4 µs CLASSIFICATION OF hFE Rank Range www.jscj-elec.com 30-40 20-30 2 Rev. - 2.1 Typical Characteristics Static Characteristic hFE 800 600 Ta=100℃ 500 20mA 400 16mA 300 12mA 200 8mA 0 1 0 2 4 6 8 VBEsat —— 12 10 COLLECTOR-EMITTER VOLTAGE 14 1 Ic 1000 1500 100 VCEsat IC —— (mA) IC 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 β=3,Ta=25℃ 800 10 COLLECTOR CURRENT VCE (V) 1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ 10 IB=4mA 100 β=5,Ta=25℃ 600 β=3,Ta=100 ℃ 400 β=5,Ta=100 ℃ 200 0.1 1 10 IC 100 β=3,Ta=25℃ β=3,Ta=100 ℃ 1 (mA) 10 IC — — VBE fT 5 (mA) TRANSITION FREQUENCY fT (MHz) COMMON EMITTER VCE=10V T =2 5℃ a T =1 00℃ a 100 1 0.1 200 400 600 800 4 —— 1 20 40 VCB/VEB 60 80 PC —— 100 IC 120 140 (mA) Ta 1200 Cib COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IC=0/IE=0 1000 Ta=25 ℃ 100 Cob 10 1 REVERSE VOLTAGE www.jscj-elec.com IC 2 COLLECTOR CURRENT 2000 1 0.1 1000 1500 (mA) 3 0 10 1000 —— IC COMMON EMITTER VCE=10V Ta=25℃ BASE-EMITER VOLTAGE VBE (mV) Cob/Cib 100 COLLECTOR CURRENT 1500 1000 10 β=5,Ta=100 ℃ β=5,Ta=25℃ 10 0.1 1000 1500 100 COLLECTOR CURREMT COLLECTOR CURRENT IC IC COMMON EMITTER VCE= 10V 40mA 36mA 32mA 28mA 24mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 700 CAPACITANCE CT (pF) —— 100 COMMON EMITTER Ta=25℃ 10 V 900 600 300 0 30 0 (V) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) Rev. - 2.1 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.1 TO-92 7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.1