A92-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors A92 TO-92 TRANSISTOR (PNP) FEATURES High voltage 1.EMITTER 2.BASE 3.COLLECTOR Equivalent Circuit  A92 Z z A92 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH LIQRQHWKHQRUPDOGHYLFH Z=Rank of h FE ;;; &RGH 1 ORDERING INFORMATION Part Number Package Packing Method A92 72 %XON 1000pcs/Bag A927$ 72 7DSH 2000pcs/Box Pack Quantity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 310 V V CEO Collector-Emitter Voltage - 305 V V EBO Emitter-Base Voltage -5 V IC Collector Current -Continuous - 200 mA ICM Collector Current - Pulsed -500 mA PC Collector Power Dissipation 625 mW -55~150 ℃ TJ,Tstg Operation Junction and Storage Temperature Range R ӨJA Thermal Resistance, Junction to Ambient 200 ℃ /mW R ӨJC Thermal Resistance,Junction to Case 83.3 ℃ /mW www.jscj-elec.com 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -310 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -305 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -200 V Emitter cut-off current IEBO VEB= -5 V, IC=0 hFE(1) VCE= -10 V, IC=- 1 mA 60 hFE(2) VCE= -10V, IC = -10 mA 80 hFE(3) VCE= -10 V, IC= -80 mA 60 Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V fT VCE= -20 V, IC= -10 mA f = 30MHz DC current gain Transition frequency IE=0 -0.25 μA -0.1 μA 250 50 MHz CLASSIFICATION OF hFE(2) Rank Range www.jscj-elec.com A B C 80-100 100-200 200-250 2 Rev. - 2.0 Typical Characteristics IC 70 (mA) -300uA 40 -250uA -200uA 30 -150uA 20 IC Ta=100℃ Ta=25℃ 100 -100uA 10 IB=-50uA COMMON EMITTER VCE= -10V 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE VCEsat —— 20 10 -0.1 24 -1 VCE (V) -10 -100 COLLECTOR CURRENT IC VBEsat —— -900 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— hFE -350uA DC CURRENT GAIN IC -400uA 50 hFE 1000 COMMON EMITTER Ta=25℃ -450uA 60 COLLECTOR CURRENT VCE —— -500uA Ta=100 ℃ -100 Ta=25℃ IC IC Ta=25℃ -600 Ta=100 ℃ β=10 β=10 -50 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -300 -0.1 -50 -10 COLLECTOR CURREMT (mA) fT VBE -100 IC (mA) IC —— (MHz) 300 fT (mA) T =2 5℃ a TRANSITION FREQUENCY -10 T =1 00℃ a IC COLLECTOR CURRENT -1 -1 100 COMMON EMITTER VCE=-20V COMMON EMITTER VCE= -10V Ta=25℃ -0.1 -0 -300 -600 -900 10 -0.1 -1200 -1 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) (pF) —— IC -100 (mA) Ta 875 Ta=25 ℃ C 10 PC 1000 f=1MHz IE=0/IC=0 Cib -10 COLLECTOR CURRENT BASE-EMITER VOLTAGE VBE (mV) CAPACITANCE -300 (mA) Cob 750 625 500 375 250 125 1 -0.1 -1 REVERSE VOLTAGE www.jscj-elec.com -10 V 0 -20 0 (V) 25 50 75 AMBIENT TEMPERATURE 3 100 Ta 125 150 (℃ ) Rev. - 2.0 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.400 1.100 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 TO-92 7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0