BC337-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. COLLECTOR 2.BASE 3. EMITTER  Equivalent Circuit BC337 BC338 BC337,BC338 'HYLFHFRGH  6ROLGGRW *UHHQPROGLQJFRPSRXQGGHYLFH Z Z LIQRQHWKHQRUPDOGHYLFH z z Z=Rank of hFE ;;; &RGH 1 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity BC337 TO-92 Bulk 1000pcs/Bag BC3377$ TO-92 Tape 2000pcs/Box BC338 TO-92 Bulk 1000pcs/Bag BC3387$ TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Value Collector-Base Voltage BC337 50 BC338 30 BC337 45 BC338 25 Unit V Collector-Emitter Voltage V 5 V Collector Current -Continuous 800 mA PD Total Device Dissipation 625 mW TJ,Tstg Operation Junction and Storage Temperature Range -55-150 ℃ VEBO Emitter-Base Voltage IC www.jscj-elec.com 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 Emitter-base breakdown voltage BC337 Collector cut-off current BC338 BC337 Collector cut-off current BC338 Emitter cut-off current BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector Output Capacitance Symbol VCBO VCEO VEBO ICBO ICEO IEBO Test conditions IC= 100uA, IE=0 IC= 10mA , IB=0 IE= 10uA, IC=0 VCB= 45V, IE=0 VCB= 25V, IE=0 VCE= 40V, IB=0 VCE= 20V, IB=0 VEB= 4 V, IC=0 hFE(1) VCE=1V, IC= 100mA hFE(2) VCE(sat) VBE(sat) VCE=1V, IC= 300mA VBE fT Cob IC=500mA, IB= 50mA IC= 500mA, IB=50mA VCE=1V, IC= 300mA VCE= 5V, IC= 10mA f = 100MHz VCB=10V,IE=0 f=1MHZ MIN TYP MAX UNIT 50 30 V V 45 25 5 V V V 100 100 160 250 60 210 0.1 0.1 0.2 0.2 0.1 630 250 400 630 uA 0.7 1.2 1.2 V V V uA uA MHz 15 pF CLASSIFICATION OF hFE(1) RANK RANGE www.jscj-elec.com BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 A B C 100-250 160-400 250-630 2 Rev. - 2.0 Typical Characteristics hFE Static Characteristic 250 1000 800uA 720uA COMMON EMITTER Ta=25℃ IC Ta=100℃ 200 560uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 640uA —— 480uA 150 400uA 320uA 100 240uA 160uA 50 Ta=25℃ 100 COMMON EMITTER VCE=3V IB=80uA 0 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 6 1 (V) 10 IC VBEsat IC —— Ta=25℃ BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 Ta=100℃ Ta=25℃ 10 (mA) IC 1000 100 800 100 COLLECTOR CURRENT Ta=100℃ β=10 β=10 1 100 1 10 100 COLLECTOR CURRENT (mA) 800 100 Cob/ Cib IC —— 10 COLLECTOR CURRENT IC (mA) —— VCB/ VEB 100 f=1MHz IE=0/ IC=0 Cib CAPACITANCE C (pF) TRANSITION FREQUENCY fT (MHz) fT IC 1 800 100 10 Ta=25℃ Cob COMMON EMITTER Ta=25℃ VCE=5V 10 1 1 0.1 10 COLLECTOR CURRENT PC 650 —— IC (mA) 1 REVERSE VOLTAGE 10 V 20 (V) Ta 600 COLLECTOR POWER DISSIPATION PC (mW) 550 500 450 400 350 300 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃ ) 3 Rev. - 2.0 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.400 1.100 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 TO-92 7DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0