JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
JC(T
BC817W
TRANSISTOR (NPN)
SOT-323
FEATURES
For General AF Applications
High Collector Current
High Current Gain
Low Collector-Emitter Saturation Voltage
1. BASE
2. EMITTER
3. COLLECTOR
MAXMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Dissipation
0.2
W
Thermal Resistance from Junction to Ambient
625
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=10μA,IE=0
50
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1μA,IC=0
5
V
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB=20V,IE=0
IEBO
VEB=5V,IC=0
hFE(1)
VCE=1V,IC=100mA
100
hFE(2)
VCE=1V,IC=500mA
40
V
0.1
μA
0.1
μA
600
Collector-emitter saturation voltage
VCE(sat)
IC=500mA,IB=50mA
0.7
V
Base-emitter saturation voltage
VBE(sat)
IC=500mA,IB=50mA
1.2
V
Base-emitter voltage
VBE(ON)
VCE=1V,IC= 500mA
1.2
V
Transition frequency
Collector output capacitance
fT
Cob
VCE=5V,IC=10mA,f=100MHz
VCB=10V,f=1MHz
100
MHz
5
pF
CLASSIFICATION of hFE (1)
Rank
BC817-16W
BC817-25W
BC817-40W
Range
100-250
160-400
250-600
Marking
www.cj-elec.com
6A
6B
1
6C
D,Sep,2014
A,Jun,2014
Typical Characteristics
Static Characteristic
250
(mA)
COMMON EMITTER
Ta=25℃
IC
hFE
0.48mA
0.40mA
100
0.32mA
0.24mA
50
Ta=25℃
DC CURRENT GAIN
0.56mA
150
100
0.16mA
COMMON EMITTER
VCE= 1V
IB=0.08mA
0
0.0
0.5
1.0
1.5
2.0
2.5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1200
3.0
10
0.5
3.5
10
IC
VCEsat
1000
500
100
COLLECTOR CURRENT
——
IC
(mA)
IC
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
900
600
Ta=25℃
Ta=100 ℃
300
0.1
1
VCE (V)
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
IC
Ta=100℃
0.64mA
1
10
100
COLLECTOR CURREMT
IC
——
IC
100
Ta=100 ℃
Ta=25℃
10
0.1
500
1
10
COLLECTOR CURREMT
(mA)
VBE
fT
1000
500
——
500
100
IC
(mA)
IC
(MHz)
COMMON EMITTER
VCE=1V
100
10
TRANSITION FREQUENCY
T =2
5℃
a
℃
T=
a 10
0
COLLECTOR CURRENT
IC
fT
(mA)
——
0.80mA
0.72mA
200
COLLECTOR CURRENT
hFE
1000
1
100
10
COMMON EMITTER
VCE= 5V
Ta=25℃
0.1
300
600
900
1
0.69
1200
1
10
1000
Cob/Cib
——
VCB/VEB
COLLECTOR POWER DISSIPATION
PC (mW)
Cib
CAPACITANCE
C
(pF)
Ta=25 ℃
100
Cob
1
0.1
0.1
——
IC
(mA)
Ta
200
150
100
50
0
1
REVERSE VOLTAGE
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PC
250
f=1MHz
IE=0/IC=0
10
100
COLLECTOR CURRENT
BASE-EMMITER VOLTAGE VBE (mV)
10
V
0
30
25
50
75
AMBIENT TEMPERATURE
(V)
2
100
Ta
125
150
(℃ )
D,Sep,2014
A,Jun,2014
SOT-323 Package Outline Dimensions
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
SOT-323 Suggested Pad Layout
www.cj-elec.com
3
D,Sep,2014
A,Jun,2014
SOT-323 Tape and Reel
www.cj-elec.com
4
D,Sep,2014
A,Jun,2014
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