BC857W

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors BC856W BC857W BC858W TRANSISTOR (PNP) SOT-323 1. BASE FEATURES y Ideally suited for automatic insertion y For Switching and AF Amplifier Applications 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO BC856W -80 BC857W -50 BC858W -30 V Collector-Emitter Voltage VCEO VEBO BC856W -65 BC857W -45 BC858W -30 -5 V Collector Current –Continuous -0.1 A PC* Collector Power Dissipation 150 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65-150 ℃ IC Emitter-Base Voltage V DEVICE MARKING BC856AW= 3A; BC856BW= 3B; BC857AW=3E; BC857BW=3F;BC857CW=3G; BC858AW=3J; BC858BW=3K; BC858CW=3L B,Aug,2013 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage BC856W BC857W Collector-emitter breakdown voltage T est conditions VCBO IC= -10μA, IE=0 Unit -30 -65 VCEO IC= -10mA, IB=0 BC858W V -50 BC856W -45 V -30 Emitter-base breakdown voltage VEBO IE= -1μA, IC=0 Collector cut-off current ICBO VCB= -30 V , IE=0 BC856AW, 857AW,858AW BC856BW, 857BW,858BW Max -80 BC858W BC857W DC current gain Min hFE VCE= -5V, IC= -2mA BC857CW,BC858CW -5 V -15 125 250 220 475 420 800 nA Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5mA -0.65 V Base-emitter saturation voltage VBE(sat) IC= -100mA, IB= -5mA -1.1 V Transition frequency fT Collector capacitance Cob VCE= -5V, IC= -10mA f=100MHz VCB=-10V, f=1MHz 100 MHz 4.5 pF B,Aug,2013