BSP51,115

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP50; BSP51; BSP52 NPN Darlington transistors Product data sheet Supersedes data of 1997 Apr 22 1999 Apr 23 NXP Semiconductors Product data sheet NPN Darlington transistors BSP50; BSP51; BSP52 FEATURES PINNING • High current (max. 1 A) PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. DESCRIPTION base 2,4 3 collector emitter APPLICATIONS • Industrial high gain amplification. 4 2, 4 DESCRIPTION 1 NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP60, BSP61 and BSP62. 1 2 Top view 3 3 MAM265 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES PARAMETER CONDITIONS collector-base voltage MIN. MAX. UNIT open emitter BSP50 − 60 V BSP51 − 80 V BSP52 − 90 V BSP50 − 45 V BSP51 − 60 V BSP52 − 80 V collector-emitter voltage VBE = 0 VEBO emitter-base voltage − 5 V IC collector current (DC) − 1 A ICM peak collector current − 2 A IB base current (DC) − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.25 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C open collector Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook”. 1999 Apr 23 2 NXP Semiconductors Product data sheet NPN Darlington transistors BSP50; BSP51; BSP52 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient Rth j-s thermal resistance from junction to solder point VALUE UNIT 96 K/W 17 K/W note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for the SOT223 in the General Part of associated Handbook“. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS TYP. MAX. UNIT collector cut-off current BSP50 VBE = 0; VCE = 45 V − − 50 nA BSP51 VBE = 0; VCE = 60 V − − 50 nA BSP52 VBE = 0; VCE = 80 V − − 50 nA − − 50 nA IC = 150 mA 1 000 − − IC = 500 mA 2 000 − − IC = 500 mA; IB = 0.5 mA − − 1.3 V IC = 500 mA; IB = 0.5 mA; Tj = 150 °C − − 1.3 V − − 1.9 V 200 − MHz − 500 − ns − 1 300 − ns IEBO emitter cut-off current IC = 0; VEB = 4 V hFE DC current gain VCE = 10 V; note 1; see Fig.2 VCEsat MIN. collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = 500 mA; IB = 0.5 mA fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz − Switching times (between 10% and 90% levels); see Fig.3 ton turn-on time toff turn-off time ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 1999 Apr 23 3 NXP Semiconductors Product data sheet NPN Darlington transistors BSP50; BSP51; BSP52 MGD838 5000 handbook, full pagewidth hFE 4000 3000 2000 1000 0 10−1 102 10 1 VCE = 10 V. Fig.2 DC current gain; typical values. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 1999 Apr 23 4 oscilloscope IC (mA) 103 NXP Semiconductors Product data sheet NPN Darlington transistors BSP50; BSP51; BSP52 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.1 OUTLINE VERSION SOT223 1999 Apr 23 REFERENCES IEC JEDEC EIAJ SC-73 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 NXP Semiconductors Product data sheet NPN Darlington transistors BSP50; BSP51; BSP52 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 Apr 23 6 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/03/pp7 Date of release: 1999 Apr 23 Document order number: 9397 750 05809