BUK7Y2R0-40H
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
9 May 2018
Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a robust LFPAK56 package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits
•
Fully automotive qualified to AEC-Q101:
•
• 175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:
•
•
Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in
same footprint
• Improved SOA and avalanche capability compared to standard TrenchMOS
• Tight VGS(th) limits enable easy paralleling of MOSFETs
LFPAK Gull Wing leads:
•
•
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
• Visual (AOI) soldering inspection, no need for expensive x-ray equipment
• Easy solder wetting for good mechanical solder joint
LFPAK copper clip technology:
•
•
Improved reliability, with reduced Rth and RDSon
Increases maximum current capability and improved current spreading
3. Applications
•
•
•
•
•
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
40
V
ID
drain current
VGS = 10 V; Tmb = 25 °C
-
-
120
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
-
217
W
BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
1.07
1.53
2
mΩ
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 12; Fig. 13
-
10.8
27.3
nC
nC
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
QGD
gate-drain charge
Source-drain diode
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Fig. 16
-
21
-
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
-
0.8
-
BUK7Y2R0-40H
Product data sheet
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N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
Simplified outline
Graphic symbol
D
mb
G
mbb076
mounting base; connected to
drain
S
1 2 3 4
LFPAK56; PowerSO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
BUK7Y2R0-40H
Package
Name
Description
Version
LFPAK56;
Power-SO8
plastic, single-ended surface-mounted package; 4 terminals
SOT669
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK7Y2R0-40H
72H040
BUK7Y2R0-40H
Product data sheet
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
40
V
VGS
gate-source voltage
DC; Tj ≤ 175 °C
-10
20
V
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
-
217
W
ID
drain current
VGS = 10 V; Tmb = 25 °C
-
120
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 2
-
600
A
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
-
120
A
-
600
A
-
108
mJ
Source-drain diode
IS
source current
Tmb = 25 °C
[1]
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S
[1]
[2]
[3]
non-repetitive drainsource avalanche
energy
ID = 120 A; Vsup ≤ 40 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[2] [3]
120A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
03na19
120
Pder
(%)
80
40
0
Fig. 1.
0
50
100
150
Tmb (°C)
200
Normalized total power dissipation as a function of mounting base temperature
BUK7Y2R0-40H
Product data sheet
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
ID
(A)
aaa-018470
103
Limit RDSon = VDS / ID
tp = 10 µs
102
100 µs
DC
10
1 ms
10 ms
100 ms
1
10-1
10-1
1
10
VDS (V)
102
Tmb = 25°C; IDM is a single pulse
Fig. 2.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
IAL
(A)
aaa-025801
103
102
(1)
10
(2)
(3)
1
10-1
10-3
10-2
10-1
1
tAL (ms)
10
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 3.
Avalanche rating; avalanche current as a function of avalanche time
BUK7Y2R0-40H
Product data sheet
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.5
0.69
K/W
aaa-018471
1
Zth(j-mb)
(K/W)
10-1
δ = 0.5
0.2
0.1
0.05
10-2
0.02
P
single shot
δ=
Fig. 4.
10-5
10-4
10-3
10-2
T
t
tp
10-3
10-6
tp
T
10-1
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK7Y2R0-40H
Product data sheet
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
40
42.7
-
V
ID = 250 µA; VGS = 0 V; Tj = -40 °C
-
40.3
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
36
39.7
-
V
ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 8;
Fig. 9
2.4
3
3.6
V
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 8
-
-
4.3
V
ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 8
1
-
-
V
VDS = 40 V; VGS = 0 V; Tj = 25 °C
-
0.2
1
µA
VDS = 16 V; VGS = 0 V; Tj = 125 °C
-
2
10
µA
VDS = 40 V; VGS = 0 V; Tj = 175 °C
-
180
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C
-
2
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
1.07
1.53
2
mΩ
VGS = 10 V; ID = 25 A; Tj = 105 °C;
Fig. 11
1.52
2.33
3.18
mΩ
VGS = 10 V; ID = 25 A; Tj = 125 °C;
Fig. 11
1.68
2.59
3.5
mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11
2.11
3.24
4.36
mΩ
f = 1 MHz; Tj = 25 °C
0.36
0.9
2.3
Ω
ID = 25 A; VDS = 32 V; VGS = 10 V;
Fig. 12; Fig. 13
-
52.6
90.5
nC
-
14.8
22.5
nC
-
10.8
27.3
nC
-
3633
5450
pF
-
984
1377
pF
-
188
415
pF
-
13.5
-
ns
-
12
-
ns
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
RDSon
RG
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
31.4
-
ns
tf
fall time
-
15.1
-
ns
-
0.8
1.2
V
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
VDS = 30 V; RL = 1.5 Ω; VGS = 10 V;
RG(ext) = 5 Ω
Source-drain diode
VSD
source-drain voltage
BUK7Y2R0-40H
Product data sheet
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
trr
reverse recovery time
-
29
-
ns
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Fig. 16
-
21
-
nC
S
softness factor
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
-
0.8
-
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C; Fig. 16
-
0.7
-
300
aaa-018472
20 V
6V
ID
(A)
10 V
250
RDSon
(mΩ)
VGS = 5.5 V
aaa-018473
8
6
200
5V
150
4
100
4.5 V
2
50
4V
0
Fig. 5.
0
1
2
3
VDS (V)
0
4
0
4
8
12
16
VGS (V)
20
Tj = 25 °C
Tj = 25 °C; ID = 25 A;
Output characteristics; drain current as a
Fig. 6.
function of drain-source voltage; typical values
Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-018474
240
ID
(A)
VGS(th)
(V)
aaa-018139
5
4
180
Max
3
Typ
120
2
Min
60
0
1
25°C
175°C
Tj = -55°C
0
1
2
3
4
5
VGS (V)
0
-60
6
VDS = 8 V
Fig. 7.
Product data sheet
0
30
60
90
120 150
Tj (°C)
180
ID = 1 mA ; VDS = VGS
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
BUK7Y2R0-40H
-30
Fig. 8.
Gate-source threshold voltage as a function of
junction temperature
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
aaa-018138
10-1
ID
(A)
10-2
Min
Typ
Max
8
10-5
4
0
1
2
3
4
VGS (V)
0
5
Tj = 25 °C; VDS = 5V
a
5V
5.5 V
12
10-4
Fig. 9.
4.5 V
16
10-3
10-6
aaa-018475
20
RDSon
(mΩ)
6V
VGS = 10 V 20 V
0
50
100
150
200
250
ID (A)
300
Tj = 25 °C
Sub-threshold drain current as a function of
gate-source voltage
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
aaa-026897
2.4
VGS
(V)
2
aaa-018476
10
8
VDS = 14 V
1.6
6
1.2
32 V
4
0.8
2
0.4
0
-60
-30
0
30
60
90
120 150
Tj (°C)
0
180
0
10
20
30
40
50
QG (nC)
60
Tj = 25 °C; ID = 25 A
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7Y2R0-40H
Product data sheet
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
aaa-018477
104
C
(pF)
VDS
ID
Ciss
103
VGS(pl)
Coss
VGS(th)
Crss
VGS
QGS2
QGS1
QGS
102
QGD
QG(tot)
003aaa508
10
10-1
Fig. 13. Gate charge waveform definitions
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaf444
aaa-018478
120
IS
(A)
ID
(A)
90
trr
ta
60
tb
0
0.25 IRM
30
175°C
0
0
0.2
0.4
Tj = 25°C
0.6
0.8
1
VSD (V)
tb
S= t
a
IRM
1.2
t (s)
VGS = 0 V
Fig. 15. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
BUK7Y2R0-40H
Product data sheet
Fig. 16. Reverse recovery waveform definitions
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
11. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
E
A2
A
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w
b
A
X
c
1/2 e
A
(A3)
A1
C
q
L
detail X
0
y C
θ
5 mm
8°
scale
0°
Dimensions (mm are the original dimensions)
Unit(1)
A
A1
A2
A3
b
b2
max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62
mm
c
c2
D(1) D1(1) E(1) E1(1)
b3
b4
2.2
0.9
0.25 0.30 4.10 4.20
5.0
3.3
2.0
0.7
0.19 0.24 3.80
4.8
3.1
e
1.27
H
L
L1
L2
6.2
0.85
1.3
1.3
5.8
0.40
0.8
0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outline
version
SOT669
References
IEC
JEDEC
JEITA
w
y
0.25
0.1
sot669_po
European
projection
Issue date
11-03-25
13-02-27
MO-235
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
BUK7Y2R0-40H
Product data sheet
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
12. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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or completeness of such information and shall have no liability for the
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Applications — Applications that are described herein for any of these
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or warranty that such applications will be suitable for the specified use
without further testing or modification.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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document supersedes and replaces all information supplied prior to the
publication hereof.
BUK7Y2R0-40H
Product data sheet
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BUK7Y2R0-40H
Nexperia
N-channel 40 V, 2.0 mΩ standard level MOSFET in LFPAK56
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................3
6. Ordering information....................................................3
7. Marking.......................................................................... 3
8. Limiting values............................................................. 4
9. Thermal characteristics............................................... 6
10. Characteristics............................................................ 7
11. Package outline........................................................ 11
12. Legal information.......................................................12
©
Nexperia B.V. 2018. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 9 May 2018
BUK7Y2R0-40H
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 May 2018
©
Nexperia B.V. 2018. All rights reserved
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