JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
BZT52C2V4-BZT52C43 ZENER DIODE
SOD-123
FEATURES:
z
Planar Die Construction
z
350mW Power Dissipation on Ceramic PCB
z
General Purpose, Medium Current
z
Ideally Suited for Automated Assembly Processes
z
Available in Lead Free Version
Maximum Ratings(Ta=25℃ unless otherwise specified)
Characteristic
Forward Voltage (Note 2)
@ IF = 10mA
Power Dissipation(Note 1)
Thermal Resistance from Junction to Ambient
Symbol
Value
Unit
VF
0.9
V
PD
350
mW
RθJA
357
150
℃ /W
℃
-55~+150
℃
Junction Temperature
TJ
Storage Temperature
TSTG
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2
2. Short duration test pulse used to minimize self-heating effect
3. f=1kHZ
C,Jan,2014
Electrical Characteristics ( Ta= 25℃ unless otherwise specified )
Type
Type
Number
Code
Zener Voltage Range (Note 2)
Maximum
Typical
Maximum Zener Impedance
Reverse
Temperature
(Note 3)
Current
Coefficent
(Note 2)
VZ@IZT
IZT
Nom(V)
Min(V)
Max(V)
mA
ZZT@IZT
ZZK@IZK
Ω
@IZTC
Test
Current
IZTC
IZK
IR
VR
mV/°C
mA
uA
V
Min
Max
mA
BZT52C2V4
WX
2.4
2.20
2.60
5
100
600
1.0
50
1.0
-3.5
0
5
BZT52C2V7
W1
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0
W2
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3
W3
3.3
3.1
3.5
5
95
600
1.0
5
1.0
-3.5
0
5
BZT52C3V6
W4
3.6
3.4
3.8
5
90
600
1.0
5
1.0
-3.5
0
5
BZT52C3V9
W5
3.9
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V3
W6
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V7
W7
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52C5V1
W8
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52C5V6
W9
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2.0
2.5
5
BZT52C6V2
WA
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52C6V8
WB
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52C7V5
WC
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52C8V2
WD
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1
WE
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10
WF
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11
WG
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12
WH
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13
WI
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15
WJ
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16
WK
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18
WL
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20
WM
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22
WN
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24
WO
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27
WP
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30
WQ
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33
WR
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36
WS
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39
WT
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
BZT52C43
WU
43
40.0
46.0
5
100
700
1.0
0.1
32
10.0
12.0
5
C,Jan,2014
Typical Characteristics
BZT52C2V4-39
Zener Characteristics(11 V to 39 V)
Zener Characteristics(VZ Up to 10 V)
100
100
PD =350mW
39
33
30
27
24
20
38
0.5
1
2
3
4
5
6
7
8
9
10
11
10
12
14
16
18
VZ, ZENER VOLTAGE (V)
20
22
24
26
28
30
32
34
40
42
VZ, ZENER VOLTAGE (V)
Temperature Coefficients
Typical Leakage Current
40
100
TYPICAL Ta VALUES
35
FOR BZT52C2V4 SERIES
10
30
IR, LEAKAGE CURRENT (uA)
θVZ, TEMPERATURE COEFFICIENT (mV/℃)
36
1
0.5
25
20
VZ @ IZT
15
10
5
1
0.1
0.01
Ta=100℃
1E-3
0
Ta=25℃
-5
1E-4
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
0
5
VZ, NOMINAL ZENER VOLTAGE (V)
10
15
20
25
30
35
40
VZ, NOMINAL ZENER VOLTAGE (V)
Effect of Zener Voltage on Zener Impedance
Typical Capacitance
1000
1000
Ta=25℃
Ta =25℃
100
1V BIAS
BIAS AT
50% OF VZ NOM
10
IZ(AC)=0.1IZ(DC)
IZ=1mA
0V BIAS
ZZT, DYNAMIC IMPEDANCE(Ω)
C, CAPACITANCE (pF)
36
1
22
10
11
12
13
10
9.1
7.5
8.2
6.2
6.8
5.6
4.7
5.1
10
18
IZ, ZENER CURRENT (mA)
Pulsed
2.4
Pulsed
IZ, ZENER CURRENT (mA)
Ta =25℃
PD =350mW
15
Ta =25℃
1
f=1kHz
100
IZ=5mA
10
1
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Power Derating Curve
(mW)
300
POWER DISSIPATION
350
PD
400
250
200
150
100
50
0
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
C,Jan,2014
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