BZV85-C10,133

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia BZV85 series Voltage regulator diodes Rev. 03 — 10 November 2009 Product data sheet 1. Product profile 1.1 General description Medium-power voltage regulator diodes in small hermetically sealed leaded SOD66 (DO-41) glass packages. The diodes are available in the normalized E24 approximately ±5 % tolerance range. The series consists of 33 types with nominal working voltages from 3.6 V to 75 V. 1.2 Features n Total power dissipation: max. 1.3 W n Working voltage range: nominal 3.3 V to 75 V (E24 range) n Small hermetically sealed glass package n Tolerance series: approximately ±5 % n Non-repetitive peak reverse power dissipation: max. 60 W 1.3 Applications n Stabilization purposes 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - - 1 V Ptot total power dissipation [1] - - 1 W [2] - - 1.3 W [3] - - 60 W Tamb = 25 °C; lead length 10 mm PZSM non-repetitive peak reverse power dissipation square wave; tp = 100 µs [1] Device mounted on a Printed-Circuit Board (PCB) with 1 cm2 copper area per lead. [2] If the leads are kept at Ttp = 55 °C at 4 mm from body. [3] Tj = 25 °C prior to surge BZV85 series NXP Semiconductors Voltage regulator diodes 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] k a 1 2 006aaa152 [1] The marking band indicates the cathode. 3. Ordering information Table 3. Ordering information Type number BZV85 [1] series[1] Package Name Description Version - hermetically sealed glass package; axial leaded; 2 leads SOD66 The series consists of 33 types with nominal working voltages from 3.3 V to 75 V. 4. Marking Table 4. Marking codes Type number Marking code BZV85 series The diodes are type branded. BZV85_SER_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 10 November 2009 2 of 10 BZV85 series NXP Semiconductors Voltage regulator diodes 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter IF forward current IZSM non-repetitive peak reverse current Conditions Max Unit mA - 500 square wave; tp = 100 µs [1] - see Table 8 half sine wave; tp = 10 ms [1] - see Table 8 Tamb = 25 °C; lead length 10 m m [2] - 1 [3] - 1.3 W [1] - 60 W total power dissipation Ptot square wave; tp = 100 µs W PZSM non-repetitive peak reverse power dissipation Tj junction temperature - 200 °C Tstg storage temperature −65 +200 °C [1] Tj = 25 °C prior to surge [2] Device mounted on a PCB with 1 cm2 copper area per lead. [3] If the leads are kept at Ttp = 55 °C at 4 mm from body. BZV85_SER_3 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 03 — 10 November 2009 3 of 10 BZV85 series NXP Semiconductors Voltage regulator diodes 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-t) thermal resistance from junction to tie-point lead length 4 mm - - 110 K/W Rth(j-a) thermal resistance from junction to ambient lead length 10 mm - - 175 K/W [1] [1] Device mounted on a PCB with 1 cm2 copper area per lead. 006aab844 103 Rth(j-t) (K/W) δ=1 0.75 0.50 0.33 102 0.20 0.10 0.05 10 0.02 0.01 0 1 10−2 Fig 1. 10−1 1 10 102 103 tp (ms) 104 Thermal resistance from junction to tie-point as a function of pulse duration; lead length 4 mm 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 50 mA - - 1 V BZV85_SER_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 10 November 2009 4 of 10 BZV85 series NXP Semiconductors Voltage regulator diodes Table 8. Characteristics per type Tj = 25 °C unless otherwise specified. BZV85- Working Cxxx voltage VZ (V) at Itest Differential Temperature Test resistance coefficient current Itest rdif (Ω) SZ (mV/K) (mA) at Itest at Itest Diode Reverse capacitance current Cd (pF) IR (µA) Non-repetitive peak reverse current at f = 1 MHz; VR = 0 V at tp = 100 µs; at tp = 10 ms; Tamb = 25 °C Tamb = 25 °C Max Max VR (V) Max (A) Max (mA) IZSM Min Max Max Min Max 3V6 3.4 3.8 15 −3.5 −1.0 60 450 50 1.0 8.0 2000 3V9 3.7 4.1 15 −3.5 −1.0 60 450 10 1.0 8.0 1950 4V3 4.0 4.6 13 −2.7 0 50 450 5 1.0 8.0 1850 4V7 4.4 5.0 13 −2.0 0.7 45 300 3 1.0 8.0 1800 5V1 4.8 5.4 10 −0.5 2.2 45 300 3 2.0 8.0 1750 5V6 5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1700 6V2 5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1620 6V8 6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1550 7V5 7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1500 8V2 7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1400 9V1 8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1340 10 9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1200 11 10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100 12 11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1000 13 12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900 15 13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760 16 15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700 18 16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600 20 18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540 22 20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500 24 22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450 27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400 30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380 33 31.0 35.0 45 24.8 35.0 8 45 0.05 23 1.0 350 36 34.0 38.0 50 27.2 39.9 8 45 0.05 25 0.9 320 39 37.0 41.0 60 29.6 43.0 6 45 0.05 27 0.8 296 43 40.0 46.0 75 34.0 48.3 6 40 0.05 30 0.7 270 47 44.0 50.0 100 37.4 52.5 4 40 0.05 33 0.6 246 51 48.0 54.0 125 40.8 56.5 4 40 0.05 36 0.5 226 56 52.0 60.0 150 46.8 63.0 4 40 0.05 39 0.4 208 62 58.0 66.0 175 52.2 72.5 4 35 0.05 43 0.4 186 68 64.0 72.0 200 60.5 81.0 4 35 0.05 48 0.35 171 75 70.0 80.0 225 66.5 88.0 4 35 0.05 53 0.3 161 BZV85_SER_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 10 November 2009 5 of 10 BZV85 series NXP Semiconductors Voltage regulator diodes mbg802 102 IZSM (A) mbg925 300 IF (mA) (1) 10 200 (1) (2) 1 10−1 1 0 10 102 VZnom (V) 0 (1) tp = 10 µs; half sine wave; Tamb = 25 °C (1) Tj = 200 °C (2) tp = 10 ms; half sine wave; Tamb = 25 °C (2) Tj = 25 °C Fig 2. (2) 100 Non-repetitive peak reverse current as a function of the nominal working voltage mbg926 10 Fig 3. 0.5 VF (V) Forward current as a function of forward voltage; typical values mbg800 100 SZ (mV/K) SZ (mV/K) (1) 80 10 (2) 9V1 8V2 7V5 6V8 5 1.0 60 6V2 5V6 40 5V1 0 (3) 4V7 4V3 20 3V6 3V9 −5 0 0 25 IZ (mA) 50 1 BZV85-C3V6 to BZV85-C10 10 VZnom (V) 102 IZ = Itest Tj = 25 °C to 150 °C Tj = 25 °C to 150 °C For types above 7.5 V the temperature coefficient is independent of current; see Table 8. (1) Maximum values (2) Typical values (3) Minimum values Fig 4. Temperature coefficient as a function of working current; typical values Fig 5. Temperature coefficient as a function of working current; typical values BZV85_SER_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 10 November 2009 6 of 10 BZV85 series NXP Semiconductors Voltage regulator diodes 8. Package outline Hermetically sealed glass package; axial leaded; 2 leads SOD66 (1) k a b D G1 L L Dimensions Unit b max 0.81 nom min mm D G1 2.6 4.8 L 0 25.4 2 4 mm scale Note 1. The marking band indicates the cathode. Outline version IEC JEDEC SOD66 Fig 6. sod066_po References JEITA European projection Issue date 97-06-20 09-10-09 DO-41 Package outline SOD66 (DO-41) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 BZV85 series[2] SOD66 52 mm tape ammopack, axial -133 52 mm reel pack, axial -113 [1] For further information and the availability of packing methods, see Section 11. [2] The series consists of 33 types with nominal working voltages from 3.3 V to 75 V. BZV85_SER_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 10 November 2009 7 of 10 BZV85 series NXP Semiconductors Voltage regulator diodes 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BZV85_SER_3 20091110 Product data sheet - BZV85_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • Legal texts have been adapted to the new company name where appropriate. Table 6: Rth(j-tp) redefined to Rth(j-t) thermal resistance from junction to tie-point Figure 1: Rth(j-tp) redefined to Rth(j-t) thermal resistance from junction to tie-point Table 8 “Characteristics per type”: IZtest redefined to Itest test current Figure 6 “Package outline SOD66 (DO-41)”: updated BZV85_2 19990511 Product specification - BZV85_1 BZV85_1 19960426 Product specification - - BZV85_SER_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 10 November 2009 8 of 10 BZV85 series NXP Semiconductors Voltage regulator diodes 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BZV85_SER_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 10 November 2009 9 of 10 BZV85 series NXP Semiconductors Voltage regulator diodes 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 10 November 2009 Document identifier: BZV85_SER_3