CJ3134KW-HAF

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS CJ3134KW N-Channel MOSFET V(BR)DSS ID RDS(on)MAX SOT-323 380 mΩ@4.5V 20V 0.75A  450 mΩ@2.5V 800 mΩ@1.8V  1. GATE 2. SOURCE 3. DRAIN APPLICATION z Drivers:Relays, Solenoids, FEATURE z High-Side Switching z Low On-Resistance z Low Threshold z Fast Switching Speed z z z MARKING Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source voltage Symbol Value Unit VDSS 20 VGS ±12 Drain Current-Continuous ID 0.75 Drain Current -Pulsed(note1) IDM 3 Power Dissipation (note 2) PD 200 mW RθJA 625 ℃/W TJ,Tstg -55 ~+150 ℃ V Typical Gate-Source Voltage A Thermal Resistance from Junction to Ambient Operation Junction and Storage Temperature Range www.jscj-elec.com 1 Rev. - 2.0 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit On/Off States Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA 20 VGS(th) VDS =VGS, ID =250µA 0.35 Gate-Body Leakage Current IGSS VDS =0V, VGS =±10V ±20 µA Zero Gate Voltage Drain Current IDSS VDS =20V, VGS =0V 1 µA Gate-Threshold Voltage(note 3) Drain-Source On-State Resistance(note 3) RDS(on) Forward Transconductance gFS 1.1 VGS =4.5V, ID =650mA 260 380 VGS =2.5V, ID =550mA 320 450 VGS =1.8V, ID =450mA 390 800 VDS =10V, ID =800mA 1 V mΩ S Dynamic Characteristics(note 4) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 120 VDS =16V,VGS =0V,f =1MHz 20 pF 15 Switching Times (note 4) Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time 6.7 VDD=10V,ID=500mA, 4.8 VGS=4.5V,RG=10Ω 17.3 ns 7.4 tf Drain-Source Diode Characteristics Drain-Source Diode Forward Voltage (note 3) VSD IS=0.15A, VGS = 0V 1.2 V Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. This test is performed with no heat sink at Ta=25℃. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%. 4. These parameters have no way to verify. www.jscj-elec.com 2 Rev. - 2.0 7\SLFDO&KDUDFWHULVWLFV Output Characteristics Transfer Characteristics 4.0 5.0 4.5 VGS=4V,5V Ta=25℃ VDS=3V VGS=3V 3.5 VGS=2.5V 3.0 Pulsed Pulsed (A) ID 3.5 3.0 DRAIN CURRENT DRAIN CURRENT ID (A) 4.0 VGS=2V 2.5 2.0 1.5 Ta=25℃ 2.5 Ta=100℃ 2.0 1.5 1.0 VGS=1.5V 1.0 0.5 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 0 5.0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 500 800 Ta=25℃ Pulsed Pulsed 700 (m) 400 350 VGS=2.5V 300 VGS=4.5V 500 250 200 0.1 ID=0.65A 600 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) VGS=1.8V RDS(ON) 450 Ta=100℃ 400 300 Ta=25℃ 200 100 0.2 0.3 0.4 0.5 0.6 0.7 DRAIN CURRENT 0.8 ID 0.9 1.0 1.1 1.2 1 (A) 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 2 0.8 Pulsed 1 VTH Ta=100℃ 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 0.7 Ta=25℃ 0.6 ID=250uA 0.5 0.4 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE www.jscj-elec.com 1.2 1.4 0.2 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) Rev. - 2.0 SOT-323 Package Outline Dimensions Dimensions In Millimeters Min Max 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP 1.200 1.400 0.525 REF 0.260 0.460 0° 8° Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Inches Min Max 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP 0.047 0.055 0.021 REF 0.010 0.018 0° 8° SOT-323 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 SOT-323 Tape and Reel SOT-323 Reel D I G W2 H 3000 2500 2000 1500 1000 D2 D1 500 W1 www.jscj-elec.com 5 Rev. - 2.0