CJL3415

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-L Plastic-Encapsulate MOSFETS CJ/3415 P-Channel 20V(D-S) MOSFET V(BR)DSS ID RDS(on)MAX 50mΩ@-4.5V  -4.0A  60mΩ@-2.5V  -20V SOT-23-6L 73mΩ@-1. 8V    FEATURE Excellent RDS(ON), low gate charge,low gate voltage APPLICATION Load switch and in PWM applicatopns High power and current handing capability Equivalent Circuit MARKING: PIN1 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current (t≤10s) ID -4.0 Pulsed Drain Current (note1) IDM -30 A Maximum Power Dissipation (t≤10s) PD 0.35 W RθJA 357 TJ 150 ℃ TSTG -55 ~+150 ℃ Thermal Resistance from Junction to Ambient Operating Junction Temperature Storage Temperature www.cj-elec.com 1 V A  ℃/W D,Aug,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max -0.56 -1 Unit Static Parameters Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =-250µA -20 Gate threshold voltage (note2) VGS(th) VDS =VGS, ID =-250µA -0.3 Gate-body leakage current IGSS Zero gate voltage drain current IDSS Drain-source on-state resistance(note2) Forward transconductance(note2) RDS(on) gFS VDS =0V, VGS =±8V ±10 VDS =0V, VGS =±4.5V ±1 VDS =-16V, VGS =0V -1 VGS =-4.5V, ID =-4A 37 50 VGS =-2.5V, ID =-4A 45 60 VGS =-1.8V, ID =-2A 56 73 VDS =-5V, ID =-4A 8 16 V µA mΩ S Dynamic Parameters (note3) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 160 Total gate charge Qg 17.2 Gate-Source charge Qgs Gate-drain charge Qgd 4.5 Turn-on delay time td(on) 9.5 1450 VDS =-10V,VGS =0V,f =1MHz pF 205 Switching Parameters(note3) Turn-on rise time Turn-off delay time Turn-off fall time VDS =-10V,VGS =-4.5V,ID =-4A tr VDS=-10V, VGS=-4.5V 17 td(off) RGEN =3Ω, RL=2.5Ω, 94 tf nC 1.3 ns 35 Drain-Source Diode Characteristics Drain-source diode forward voltage(note2) Maximum continuous drain-source diode forward current VDs VGS = 0V, IS =-1A IS -1 V -4 A Notes: 1. Repetitive rating,pulse width limited by junction temperature. 2. Pulse Test : Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. These parameters have no way to verify. www.cj-elec.com 2 D,Aug,2015 7\SLFDO&KDUDFWHULVWLFV Transfer Characteristics Output Characteristics -20 -1.6 Pulsed VDS=-16V -2.5V VGS=-8.0V Pulsed -1.4 -4.5V -2.0V (A) ID DRAIN CURRENT (A) DRAIN CURRENT ID -15 -10 VGS=-1.5V -5 -1.2 -1.0 -0.8 Ta=100℃ -0.6 -0.4 Ta=25℃ -0.2 -0 -0.0 -0.5 -1.0 -1.5 -2.0 DRAIN TO SOURCE VOLTAGE RDS(ON) —— -2.5 VDS -0.0 -0.0 -3.0 ID RDS(ON) 60 -0.6 -0.8 —— VGS -1.0 (V) VGS Ta=25℃ Pulsed Ta=25℃ Pulsed VGS=-1.8V (mΩ) (mΩ) 70 RDS(ON) 60 VGS=-2.5V ON-RESISTANCE RDS(ON) -0.4 GATE TO SOURCE VOLTAGE 80 ON-RESISTANCE -0.2 (V) 50 40 50 ID=-4A 40 30 VGS=-4.5V 20 30 -2 -3 -4 -5 -6 DRAIN CURRENT -7 -8 ID -9 -10 -0 -4 -6 -8 GATE TO SOURCE VOLTAGE (A) IS —— VSD -10 -2 VGS -10 (V) Threshold Voltage -0.9 Ta=25℃ Pulsed -0.8 (V) VTH -0.1 -0.7 -0.6 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) -1 -0.01 -1E-3 ID=-250uA -0.5 -0.4 -0.3 -0.2 -1E-4 -0.1 -1E-5 -0.0 -0.2 -0.4 -0.6 -0.8 SOURCE TO DRAIN VOLTAGE -1.0 VSD (V) -1.2 -0.0 25 50 75 JUNCTION TEMPERATURE 100 TJ 125 (℃ ) ZZZFMHOHFFRP3D,Aug,2015 627/3DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b c D E1 E e e1 L  Dimensions In Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 1.500 1.700 2.650 2.950 0.950(BSC) 1.800 2.000 0.300 0.600 0° 8° Dimensions In Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 0.059 0.067 0.104 0.116 0.037(BSC) 0.071 0.079 0.012 0.024 0° 8° 627/6XJJHVWHG3DG/D\RXW ZZZFMHOHFFRPD,Aug,2015 627/7DSHDQG5HHO ZZZFMHOHFFRPD,Aug,2015