MMBT2222AM

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate Transistors MMBT2222AM TRANSISTOR (NPN) SOT-723 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907AM) 3 1 1. BASE 2 2.EMITTER MARKING: 1P 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V 0.5 A IC Collector Current -Continuous PC Power Dissipation 100 mW Thermal Resistance from Junction to Ambient 1250 ℃/W -55~+150 ℃ RΘJA TJ,Tstg Operation Junction and Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 75 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.01 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 μA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 μA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE * VCE(sat) VBE(sat) Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf * * VCE=10V, IC= 150mA 100 VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 500mA 42 300 IC=500 mA, IB= 50mA 1 V IC=150 mA, IB=15mA 0.3 V IC=500 mA, IB= 50mA 2.0 V IC=150 mA, IB=15mA 1.2 V VCE=20V, IC= 20mA, f=100MHz 300 MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 ns 25 ns VCC=30V, IC=150mA IB1=-IB2=15mA 225 ns 60 ns *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. www.jscj-elec.com 1 Rev. - 2.0 Typical Characteristics Static Characteristic 0.25 0.20 COMMON EMITTER VCE=10V COMMON EMITTER Ta=25℃ 720uA 640uA Ta=100℃ hFE 560uA 480uA 0.15 DC CURRENT GAIN COLLECTOR CURRENT IC (A) 800uA —— IC hFE 1000 400uA 0.10 320uA 240uA 0.05 Ta=25℃ 100 160uA IB=80uA 0.00 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCEsat —— 10 0.1 16 1 10 COLLECTOR CURRENT (V) IC VBEsat 100 IC 600 (mA) —— IC 2 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 VCE 14 Ta=100℃ 100 Ta=25℃ 1 10 100 COLLECTOR CURRENT IC 600 IC Ta=25℃ Ta=100℃ β=10 β=10 10 1 0.1 1 600 10 100 COLLECTOR CURRENT (mA) —— VBE 100 Cob/ Cib IC 600 (mA) —— VCB/ VEB 100 (pF) CAPACITANCE C T= a 25 ℃ T= a 10 0℃ COLLECTOR CURRENT 10 1 10 Cob COMMON EMITTER VCE=10V 0.1 0.0 0.3 0.6 0.9 1 0.1 1.2 BASE-EMMITER VOLTAGE VBE (V) Pc 150 COLLECTOR POWER DISSIPATION Pc (mW) Ta=25℃ Cib IC (mA) f=1MHz IE=0/ IC=0 —— 1 REVERSE VOLTAGE 10 V 20 (V) Ta 100 50 0 0 25 50 75 AMBIENT TEMPERATURE www.jscj-elec.com 100 Ta 125 150 (℃) 2 Rev. - 2.0 SOT-723 Package Outline Dimensions Symbol A A1 b b1 c D E E1 e θ Dimensions In Millimeters Min. Max. 0.430 0.500 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. Dimensions In Inches Min. Max. 0.017 0.020 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. SOT-723 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 3 Rev. - 2.0 SOT-723 Tape and Reel www.jscj-elec.com 4 Rev. - 2.0