MPS2907A

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPS2907A TO-92 TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary NPN Type available (MPS2222A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol ParDPHWHU Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipation 0.625 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol T est conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -10 nA Collector cut-off current ICEX VCE=-30V,VEB(off)=-0.5V -50 nA Emitter cut-off current IEBO VEB=-3V,IC=0 -10 nA hFE(1) VCE=-10V,IC=-0.1mA 78 hFE(2) VCE=-10V,IC=-150mA 100 hFE(3) VCE=-10V,IC=-500mA 52 VCE(sat) IC=-150mA,IB=-15mA -0.4 V VCE(sat) IC=-500mA,IB=-50mA -0.67 V VBE(sat) IC=-150mA,IB=-15mA -1 V VBE(sat) IC=-500mA,IB=-50mA -1.2 V DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz Delay time td VCC=-30V,Ic=-150mA, 10 ns Rise time tr IB1=-IB2=-15mA 25 ns Storage time tS VCC=-6V,Ic=-150mA, 225 ns Fall time tf IB1=-IB2=-15mA 60 ns 200 MHz CLASSIFICATION OF hFE(2) Rank Range www.cj-elec.com L H 100-200 200-300 1 C,Jan,2015 Typical Characteristics Typical Characterisitics MPS2907A hFE Static Characteristic -200 -160 COLLECTOR CURRENT IC (mA) 1000 -1mA -900uA -800uA COMMON EMITTER VCE=-10V Ta=100℃ DC CURRENT GAIN hFE -600uA -500uA -400uA -80 -300uA -200uA -40 IB=-100uA -0 -0 -10 -30 -20 -40 COLLECTOR-EMITTER VOLTAGE VCEsat -1 IC COMMON EMITTER Ta=25℃ -700uA -120 —— —— VCE Ta=25℃ 100 10 -0.1 -50 -1 (V) -100 -10 COLLECTOR CURRENT IC VBEsat -1.2 —— IC -600 (mA) IC -0.1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 Ta=100℃ Ta=25℃ Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -0.01 -0.0 -1 -10 -100 COLLECTOR CURRENT IC —— -10 (mA) VBE Cob/ Cib 100 —— IC -600 (mA) VCB/ VEB COMMON EMITTER VCE=-10V f=1MHz IE=0/IC=0 Ta=25℃ -100 Ta=100℃ -10 Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 Cib Cob 10 1 -0.1 -1.0 -1 BASE-EMMITER VOLTAGE VBE (V) fT 500 -10 REVERSE VOLTAGE —— IC PC 750 —— V -20 (V) Ta 625 400 COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) -100 COLLECTOR CURRENT CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) -600 IC -1 -600 300 200 100 COMMON EMITTER VCE=-20V 500 375 250 125 Ta=25℃ 0 0 -4 -10 COLLECTOR CURRENT www.cj-elec.com -100 IC 0 25 50 75 AMBIENT TEMPERATURE (mA) 2 100 Ta 125 150 (℃ ) C,Jan,2015 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.300 4.700 3.430 4.700 4.300 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.146 0.130 0.043 0.055 0.015 0.022 0.014 0.020 0.169 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 C,Jan,2015 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 C,Jan,2015