MPSA56-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 MPSA56 TRANSISTOR (PNP) 1.EMITTER FEATURES z General Purpose Switching and Amplification. 2.BASE 3.COLLECTOR 0  Equivalent Circuit MPSA56 = Device code Solid dot = Green molding compound device, if none, the normal device XXX = Code M PS 2   &('  ,& &  "  ! "-.* "-.* "-./  036$ 72 %XON 1000pcs/Bag 036$7$  72 Tape 2000pcs/Box      #$%&  Collector-Base Voltage -80 V #$'&  Collector-Emitter Voltage -80 V #'%&  Emitter-Base Voltage -4 V $  Collector Current -Continuous -0.5 A "(  Collector Power Dissipation 625 mW  Thermal Resistance rom Junction Wo Ambient  200  /W  ș +  TJ, *  www.jscj-elec.com "    ! # Operation Junction and Storage Temperature Range 1 -55 a  Rev. - 2.0 '3'$ $3$4$ ' $ Ta =25  unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -0.1mA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -80 V Emitter-base breakdown voltage -4 V(BR)EBO IE=-0.1mA,IC=0 Collector cut-off current ICBO VCB=-80V,IE=0 -0.1 A Collector cut-off current ICEO VCE=-60V,IB=0 -0.1 A Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 A hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE=-1V, IC=-100mA 100 VCE(sat) IC=-100mA,IB=-10mA -0.25 V Base-emitter voltage VBE IC=-100mA, VCE=-1V -1.2 V Transition frequency fT DC current gain Collector-emitter saturation voltage www.jscj-elec.com VCE=-1V,IC=-100mA,f=100MHz 2 50 V MHz Rev. - 2.0 Typical Characteristics Static Characteristic hFE -100 COMMON EMITTER Ta=25ć IB=-800uA IB= -720uA IB= -560uA IB=-480uA IB=-400uA -60 IB= -320uA -40 VCE=-1V Ta=100 ć IB=-640uA -80 IC —— 500 DC CURRENT GAIN hFE (mA) -120 COLLECTOR CURRENT IC -140 IB=-240uA Ta=25 ć 100 IB=-160uA -20 IB= -80uA -0 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR-EMITTER VOLTAGE Ta=25ć Ta=100ć ȕ=10 -1 -10 IC —— VBE T =2 5ć a -600 -900 BASE-EMMITER VOLTAGE CAPACITANCE C (pF) 1000 Cob/ Cib —— ȕ=10 -1 -10 fT VBE —— IC IC VCE= -1V Ta=25 ć -10 -3 (mV) -100 COLLECTOR CURRENT VCB/ VEB Cib Cob 10 f=1MHz IE=0/IC=0 (mA) 10 PC 700 100 -500 -100 100 1 -1200 COLLECTOR POWER DISSIPATION PC (mW) COLLCETOR CURRENT IC T =1 00 ć a VCE=-1V -300 Ta=25ć 1000 -10 -0 IC COLLECTOR CURRENT -100 -1 —— (mA) Ta=100ć (mA) (mA) -500 IC -500 -100 IC -100 -10 -500 -100 COLLECTOR CURRENT VCEsat -1000 -1000 -100 -10 COLLECTOR CURRENT IC —— -1 (V) TRANSITION FREQUENCY fT (MHz) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 -3.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VBEsat -2000 VCE -3.0 —— IC (mA) Ta 600 500 400 300 200 100 Ta=25 ć 1 -0.1 -1 REVERSE VOLTAGE www.jscj-elec.com -10 V 0 -20 (V) 0 25 50 75 100 AMBIENT TEMPERATURE 3 Ta 125 150 (ć ) Rev. - 2.0  &89"-.*&(   ! A A1 b c D D1 E e e1 L  h (   ( -  7  7 3.300 3.700 0.130 0.146 1.100 1.400 0.043 0.055 0.380 0.550 0.015 0.022 0.360 0.510 0.014 0.020 4. 4.700 3.430 0.135 4.300 4.700 0.169 0.185 1.270 TYP 0.050 TYP 2.440 2.640 0.096 0.104 14.100 14.500 0.555 0.571 1.600 0.063 0.000 0.380 0.000 0.015 &89**"3 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0  &897DSHDQG5HHO www.jscj-elec.com 5 Rev. - 2.0