PBSS5350Z,135

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS5350Z 50 V low VCEsat PNP transistor Product data sheet Supersedes data of 2003 Jan 20 2003 May 13 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor PBSS5350Z FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High collector current capability: IC and ICM VCEO collector-emitter voltage −50 V IC collector current (DC) −3 A • Higher efficiency leading to less heat generation ICM peak collector current −5 A • Reduced PCB area requirements compared to DPAK. RCEsat equivalent on-resistance