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PDTC144VT,215

PDTC144VT,215

  • 厂商:

    RUBYCON(红宝石)

  • 封装:

    SOT-23

  • 描述:

    晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直流电流增益(hFE@Ic,Vce):...

  • 数据手册
  • 价格&库存
PDTC144VT,215 数据手册
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - © Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PDTC144V series NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ Rev. 04 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA PDTC144VE SOT416 SC-75 PDTA144VE PDTC144VK SOT346 SC-59A PDTA144VK PDTC144VM SOT883 SC-101 PDTA144VM PDTC144VS[1] SOT54 (TO-92) SC-43A PDTA144VS PDTC144VT SOT23 - PDTA144VT PDTC144VU SOT323 SC-70 PDTA144VU [1] Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features „ Built-in bias resistors „ Simplifies circuit design „ Reduces component count „ Reduces pick and place costs 1.3 Applications „ General-purpose switching and amplification „ Inverter and interface circuits „ Circuit drivers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current (DC) - - 100 mA R1 bias resistor 1 (input) 33 47 61 kΩ R2/R1 bias resistor ratio 0.17 0.21 0.26 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol SOT54 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 3 1 R2 001aab347 3 006aaa145 SOT54A 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 1 R2 3 001aab348 3 006aaa145 SOT54 variant 1 input (base) 2 output (collector) 3 2 R1 GND (emitter) 1 2 3 1 R2 001aab447 3 006aaa145 SOT23, SOT323, SOT346, SOT416 1 input (base) 2 GND (emitter) 3 3 3 R1 output (collector) 1 R2 1 2 2 006aaa144 sym007 SOT883 1 input (base) 2 GND (emitter) 3 output (collector) 3 R1 1 R2 2 sym007 PDTC144V_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 2 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTC144VE SC-75 plastic surface mounted package; 3 leads SOT416 PDTC144VK SC-59A plastic surface mounted package; 3 leads SOT346 PDTC144VM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 PDTC144VS[1] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads PDTC144VT - plastic surface mounted package; 3 leads SOT23 PDTC144VU SC-70 plastic surface mounted package; 3 leads SOT323 [1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. Marking codes Type number Marking code[1] PDTC144VE 18 PDTC144VK 29 PDTC144VM G6 PDTC144VS TC144V PDTC144VT *AA PDTC144VU *18 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PDTC144V_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 3 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO VCEO collector-base voltage open emitter - 50 V collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 15 V VI input voltage positive - +40 V negative - −15 V IO output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation [1] - 150 mW SOT416 Tamb ≤ 25 °C SOT346 Tamb ≤ 25 °C [1] - 250 mW SOT883 Tamb ≤ 25 °C [2][3] - 250 mW SOT54 Tamb ≤ 25 °C [1] - 500 mW SOT23 Tamb ≤ 25 °C [1] - 250 mW SOT323 Tamb ≤ 25 °C [1] - 200 mW °C Tstg storage temperature −65 +150 Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Refer to standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Typ Max Unit SOT416 [1] - - 833 K/W SOT346 [1] - - 500 K/W SOT883 [2][3] - - 500 K/W SOT54 [1] - - 250 K/W SOT23 [1] - - 500 K/W SOT323 [1] - - 625 K/W [1] Refer to standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 μm copper strip line. PDTC144V_SER_4 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 4 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 μA VCE = 30 V; IB = 0 A; Tj = 150 °C - - 50 μA μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 150 hFE DC current gain VCE = 5 V; IC = 5 mA 40 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 μA - 3.1 1 V VI(on) on-state input voltage VCE = 300 mV; IC = 2 mA 6 3.8 - V R1 bias resistor 1 (input) 33 47 61 kΩ R2/R1 bias resistor ratio 0.17 0.21 0.26 Cc collector capacitance - - 2 VCB = 10 V; IE = ie = 0 A; f = 1 MHz PDTC144V_SER_4 Product data sheet pF © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 5 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 006aaa099 103 006aaa100 1 hFE (2) 102 (1) VCEsat (V) (3) 10−1 (1) (2) 10 (3) 1 10−1 1 102 10 10−2 1 102 10 IC (mA) IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2. 006aaa101 10 VI(on) (V) 1 006aaa102 10 VI(off) (V) (1) 1 10−1 Collector-emitter saturation voltage as a function of collector current; typical values (1) (2) (2) (3) (3) 1 10−1 102 10 I C (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values PDTC144V_SER_4 Product data sheet 10 I C (mA) (1) Tamb = −40 °C Fig 3. 1 © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 6 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 8. Package outline 3 3 0.45 0.15 1 2 1 0.30 0.15 2 0.25 0.10 Dimensions in mm 04-11-04 Package outline SOT416 (SC-75) 0.62 0.55 0.55 0.47 Dimensions in mm Fig 6. 0.50 0.46 0.26 0.10 04-11-11 Package outline SOT346 (SC-59A/TO-236) 0.45 0.38 4.2 3.6 3 0.30 0.22 0.48 0.40 1.02 0.95 0.65 1 2 4.8 4.4 2 2.54 3 1 0.20 0.12 5.2 5.0 0.35 Dimensions in mm Fig 7. 0.50 0.35 1.9 1 0.30 0.22 0.6 0.2 3.0 1.7 2.5 1.3 1.75 0.9 1.45 0.7 Fig 5. 1.3 1.0 3.1 2.7 0.95 0.60 1.8 1.4 03-04-03 Package outline SOT883 (SC-101) 14.5 12.7 Dimensions in mm Fig 8. 04-11-16 Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 0.45 0.38 4.2 3.6 1.27 4.2 3.6 1.27 0.48 0.40 3 max 1 2.5 max 0.48 0.40 1 2 4.8 4.4 5.08 2.54 2 4.8 4.4 2.54 3 1.27 3 5.2 5.0 Dimensions in mm Fig 9. 5.2 5.0 14.5 12.7 Package outline SOT54A 04-06-28 Dimensions in mm 05-01-10 Fig 10. Package outline SOT54 variant PDTC144V_SER_4 Product data sheet 14.5 12.7 © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 7 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 3.0 2.8 1.1 0.9 2.2 1.8 1.1 0.8 0.45 0.15 3 3 0.45 0.15 2.5 1.4 2.1 1.2 2.2 1.35 2.0 1.15 1 1 2 1.9 0.48 0.38 Dimensions in mm 0.25 0.10 1.3 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) 2 0.4 0.3 0.15 0.09 Dimensions in mm 04-11-04 Fig 12. Package outline SOT323 (SC-70) 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 5000 10000 PDTC144VE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135 PDTC144VK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTC144VM SOT883 2 mm pitch, 8 mm tape and reel - - -315 PDTC144VS SOT54 bulk, straight leads - -412 - SOT54A tape and reel, wide pitch - - -116 tape ammopack, wide pitch - - -126 SOT54 variant bulk, delta pinning - -112 - PDTC144VT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235 PDTC144VU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135 [1] For further information and the availability of packing methods, see Section 12. PDTC144V_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 8 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTC144V_SER_4 20091116 Product data sheet - PDTC144V_SER_3 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. PDTC144V_SER_3 20050215 Product data sheet - PDTC144VT_2 PDTC144VT_2 20040511 Objective data sheet - PDTC144VT_1 PDTC144VT_1 20040305 Objective data sheet - - PDTC144V_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 9 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PDTC144V_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 16 November 2009 10 of 11 PDTC144V series NXP Semiconductors NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 10 kΩ 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 November 2009 Document identifier: PDTC144V_SER_4
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