RU140N10R

RU140N10 N-Channel Advanced Power MOSFET Features • 100V/140A Pin Description RDS (ON)=6.5mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Low Gate Charge • Fast Switching and Fully Avalanche Rated • 100% avalanche tested TO-220 TO-220F TO-247 TO-263 Applications ·Switching applications N-Channel MOSFET Rating Unit Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 100 ±25 175 -55 to 175 140 ① V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 560 140 ② ① ① A 100 250 125 0.6 W 62.5 °C/W Drain-Source Avalanche Ratings ③ Avalanche Energy ,Single Pulsed EAS Storage Temperature Range 1.1 J -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev.A –SEP., 2010 www.ruichips.com RU140N10 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU140N10 Parameter Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 100V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 100 1 30 2 3 4 ±100 6.5 8 V µA V nA mΩ Diode Characteristics VSD trr qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=40 A, VGS=0V ISD=40A, dlSD/dt=100A/µs 90 200 1.2 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 25V, Frequency=1.0MHz 1.6 7550 810 250 30 Ω pF VDD=50V,IDS= 70A, VGEN= 10V,RG=2.5Ω 210 ns 160 120 Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge ①Current limited by package. ②Pulse width limited by safe operating area. ③IAS =55A, VDD = 50V, RG = 47Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤400µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to produ ction testing. 135 VDS=80V, VGS= 10V, IDS=70A 30 45 175 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 2 www.ruichips.com RU140N10 Typical Characteristics Power Dissipation Drain Current ID - Drain Current (A) Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Ptot-Power(W) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 ID - Drain Current (A) www.ruichips.com RU140N10 Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Normalized Gate Threshold Voltage VGS - Gate - Source Voltage (V) Normalized Gate-Source Voltage (V) RDS(ON) - On - Resistance (mΩ) Tj - Junction Temperature (°C) Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 4 www.ruichips.com RU140N10 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 5 www.ruichips.com RU140N10 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 6 www.ruichips.com RU140N10 Ordering and Marking Information RU140N10 Package (Available) R : TO-220; S: TO-263 ; Q: TO-247 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Device Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 7 www.ruichips.com RU140N10 Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 8 www.ruichips.com RU140N10 TO-263-2L SYMBOL A A1 A2 b b1 c C1 D E e H MM MIN 4.40 0 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.57 0.10 2.69 8.70 10.16 2.54BSC 15.10 15.50 0.579 MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 MIN 0.173 0 0.102 0.030 0.048 0.013 0.048 0.338 0.394 INCH NOM 0.180 0.004 0.106 0.343 0.4 0.1BSC 0.594 0.610 MAX 0.185 0.010 0.110 0.035 0.052 0.019 0.052 0.346 0.404 SYMBOL L L3 L1 L4 L2 MIN 2.00 1.17 - MM NOM 2.30 1.27 0.25BSC 2.50REF. 0° 5° 1° 0.05 1.40 7° 3° 0.10 1.50 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 MAX 2.60 1.40 1.70 MIN 0.079 0.046 - INCH NOM 0.090 0.050 0.01BSC 0.098REF. 7° 3° 0.004 0.059 8° 9° 5° 0.008 0.063 MAX 0.102 0.055 0.067 θ θ1 θ2 DEP Øp1 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 9 www.ruichips.com RU140N10 TO-247 SYMBOL A A1 B b1 b2 c c1 D E1 MM MIN 4.850 2.200 1.000 2.800 1.800 0.500 1.900 15.450 MAX 5.150 2.600 1.400 3.200 2.200 0.700 2.100 15.750 MIN INCH MAX 0.200 0.102 0.055 0.126 0.087 0.028 0.083 0.620 SYMBOL E2 L L1 L2 Φ e H h MIN 0,191 0.087 0.039 0.110 0.071 0.020 0.075 0.608 MM MAX 41.300 25.100 20.600 7.300 3.600 REF 40.900 24.800 20.300 7.100 INCH MIN 1.610 0.976 0.799 0.280 MAX 1.626 0.988 0.811 0.287 0.142 REF 5.450 TYP 5.980 REF. 0.000 0.300 0.215 TYP 0.235 REF. 0.000 0.012 3.500 REF. 0.138 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 10 www.ruichips.com RU140N10 Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 11 www.ruichips.com