RU1H100R

RU1H100 N-Channel Advanced Power MOSFET Features • 100V/75A Pin Description RDS (ON)=11mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Extremely high dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested TO-220 TO-220F TO-247 TO-263 Applications ·High Speed Power Switching ·Uninterruptible Power Supply Absolute Maximum Ratings Symbol Parameter N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 100 ±25 175 -55 to 175 75 ① V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 300 75 59 ① A 200 100 0.75 62.5 W °C/W Drain-Source Avalanche Ratings ② Avalanche Energy ,Single Pulsed EAS Storage Temperature Range 400 mJ -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev.A –SEP., 2010 www.ruichips.com RU1H100 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU1H100 Parameter Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 100V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 100 1 30 2 3 4 ±100 11 14 V µA V nA mΩ Diode Characteristics VSD trr qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=40A, VGS=0V ISD=40A, dlSD/dt=100A/µs 36 46 1.2 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 50V, Frequency=1.0MHz 1.5 3450 265 148 19 Ω pF VDD=50V,IDS= 40A, VGEN= 10V,RG=5.6Ω 86 ns 55 69 Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge ①Current limited by package. ② Limited by TJmax, IAS =40A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C ③Pulse test ; Pulse width≤400µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing . 85 VDS=80V, VGS= 10V, IDS=40A 20 35 135 nC Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 2 www.ruichips.com RU1H100 Typical Characteristics Power Dissipation Drain Current ID - Drain Current (A) Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Ptot-Power(W) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 ID - Drain Current (A) www.ruichips.com RU1H100 Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Normalized Gate Threshold Voltage VGS - Gate - Source Voltage (V) Normalized Gate-Source Voltage (V) RDS(ON) - On - Resistance (mΩ) Tj - Junction Temperature (°C) Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 4 www.ruichips.com RU1H100 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 5 www.ruichips.com RU1H100 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 6 www.ruichips.com RU1H100 Ordering and Marking Information RU1H100 Package (Available) R : TO-220; S: TO-263 ; Q: TO-247 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Device Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 7 www.ruichips.com RU1H100 Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 8 www.ruichips.com RU1H100 TO-263-2L SYMBOL A A1 A2 b b1 c C1 D E e H MM MIN 4.40 0 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.57 0.10 2.69 8.70 10.16 2.54BSC 15.10 15.50 0.579 MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 MIN 0.173 0 0.102 0.030 0.048 0.013 0.048 0.338 0.394 INCH NOM 0.180 0.004 0.106 0.343 0.4 0.1BSC 0.594 0.610 MAX 0.185 0.010 0.110 0.035 0.052 0.019 0.052 0.346 0.404 SYMBOL L L3 L1 L4 L2 MIN 2.00 1.17 - MM NOM 2.30 1.27 0.25BSC 2.50REF. 0° 5° 1° 0.05 1.40 7° 3° 0.10 1.50 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 MAX 2.60 1.40 1.70 MIN 0.079 0.046 - INCH NOM 0.090 0.050 0.01BSC 0.098REF. 7° 3° 0.004 0.059 8° 9° 5° 0.008 0.063 MAX 0.102 0.055 0.067 θ θ1 θ2 DEP Øp1 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 9 www.ruichips.com RU1H100 TO-247 SYMBOL A A1 B b1 b2 c c1 D E1 MM MIN 4.850 2.200 1.000 2.800 1.800 0.500 1.900 15.450 MAX 5.150 2.600 1.400 3.200 2.200 0.700 2.100 15.750 MIN INCH MAX 0.200 0.102 0.055 0.126 0.087 0.028 0.083 0.620 SYMBOL E2 L L1 L2 Φ e H h MIN 0,191 0.087 0.039 0.110 0.071 0.020 0.075 0.608 MM MAX 41.300 25.100 20.600 7.300 3.600 REF 40.900 24.800 20.300 7.100 INCH MIN 1.610 0.976 0.799 0.280 MAX 1.626 0.988 0.811 0.287 0.142 REF 5.450 TYP 5.980 REF. 0.000 0.300 0.215 TYP 0.235 REF. 0.000 0.012 3.500 REF. 0.138 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 10 www.ruichips.com RU1H100 Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A –SEP., 2010 11 www.ruichips.com