RU1H130R

RU1H130R N-Channel Advanced Power MOSFET MOSFET Features • 100V/110A, RDS (ON) =10mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications • High Efficiency Synchronous Rectification in SMPS • High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 100 ±25 175 -55 to 175 TC=25°C 110 ① Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink I DP ID 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 440 ② ① A A W W °C/W 110 PD RθJC ③ 79 300 150 0.5 ① Maximum Power Dissipation Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 552 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 www.ruichips.com RU1H130R Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TC=25°C Unless Otherwise Noted) RU1H130R Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=100V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS=10V, IDS=65A 100 1 30 2 3 4 ±100 10 12 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=65A, VGS=0V ISD=65A, dlSD/dt=100A/µs 42 64 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=50V, Frequency=1.0MHz VDD=50V, RL=1Ω, IDS=65A, VGEN=10V, RG=5Ω 1.0 6800 630 350 22 86 72 66 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=80V, VGS=10V, IDS=65A 130 32 55 nC Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Pulse width limited by safe operating area. Limited by TJmax, IAS =47A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 2 www.ruichips.com RU1H130R Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 ID - Drain Current (A) www.ruichips.com RU1H130R Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) Drain-Source On Resistance RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 RDS(ON) - On - Resistance (m) www.ruichips.com RU1H130R Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) Capacitance IS - Source Current (A) VSD - Source-Drain Voltage (V) Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 5 www.ruichips.com RU1H130R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 6 www.ruichips.com RU1H130R Ordering and Marking Information Device RU1H130R Marking RU1H130R Package TO-220 Packaging Tube Quantity 50 Reel Size Tape width - Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 7 www.ruichips.com RU1H130R Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 8 www.ruichips.com RU1H130R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2012 9 www.ruichips.com