RU1H35L

RU1H35L N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications • High Speed Power Switching N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 100 ±25 175 -55 to 175 TC=25°C 40 ① ② Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 160 A A W W °C/W 40 30 97 48 Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 1.55 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 90 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 www.ruichips.com RU1H35L Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU1H35L Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 100V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=16A 100 1 10 2 3 4 ±100 21 25 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=16A, VGS=0V ISD=16A, dlSD/dt=100A/µs 0.8 100 430 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 25V, Frequency=1.0MHz VDD=50V, RL=30Ω, IDS=16A, VGEN= 10V, RG=4.7Ω 2.8 2100 250 115 22 76 60 23 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=80V, VGS= 10V, IDS=16A 44 10 21 nC Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Limited by TJmax, IAS =19A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 2 www.ruichips.com RU1H35L Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Ptot - Power (W) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 ID - Drain Current (A) www.ruichips.com RU1H35L Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU1H35L Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) Capacitance IS - Source Current (A) VSD - Source-Drain Voltage (V) Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 5 www.ruichips.com RU1H35L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 6 www.ruichips.com RU1H35L Ordering and Marking Information RU1H35 Package (Available) L : TO252 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR: Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 7 www.ruichips.com RU1H35L Package Information TO252-2L SYMBOL A A1 b C D D1 D2 E e MM MIN 2.200 0.000 0.660 0.460 6.500 5.100 6.000 2.186 MAX 2.400 0.127 0.860 0.580 6.700 5.460 6.200 2.386 MIN INCH MAX 0.094 0.005 0.034 0.023 0.264 0.215 0.244 0.094 SYMBOL L L1 L2 L3 L4 Φ θ h V MIN 9.800 1.400 0.600 1.100 0° 0.000 0.087 0.000 0.026 0.018 0.256 0.201 0.236 0.086 MM MAX 10.400 1.700 1.000 1.300 8° 0.300 INCH MIN 0.386 0.055 0.024 0.043 0° 0.000 MAX 0.409 0.067 0.039 0.051 8° 0.012 2.900 REF. 1.600 REF. 0.114 REF. 0.063REF. 4.830 REF. 0.190 REF. 5.350 REF. 0.211 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 8 www.ruichips.com RU1H35L Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 9 www.ruichips.com