RU1H35S

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features • 100V/40A, RDS (ON) =21mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 TO-220F TO-263 TO-247 Applications •Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 100 ±25 175 -55 to 175 TC=25°C 40 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 160 40 A A ② 27 111 56 1.35 W °C/W Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 220 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 www.ruichips.com RU1H35S Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU1H35S Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 100V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=16A 100 1 10 2 3 4 ±100 21 25 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=16A, VGS=0V ISD=16A, dlSD/dt=100A/µs 0.8 100 430 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 25V, Frequency=1.0MHz VDD=50V, RL=30Ω, IDS=16A, VGEN= 10V, RG=4.7Ω 2.8 2100 250 115 22 76 60 23 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=80V, VGS= 10V, IDS=16A 44 10 21 nC Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Limited by TJmax, IAS =21A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 2 www.ruichips.com RU1H35S Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU1H35S Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU1H35S Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 5 www.ruichips.com RU1H35S Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 6 www.ruichips.com RU1H35S Ordering and Marking Information RU1H35 Package (Available) S : TO263 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 7 www.ruichips.com RU1H35S Package Information TO-263-2L SYMBOL A A1 A2 b b1 c C1 D E e H MM MIN 4.40 0 2.59 0.77 1.23 0.34 1.22 8.60 10.00 14.70 NOM 4.57 0.10 2.69 8.70 10.16 2.54BSC 15.10 15.50 0.579 MAX 4.70 0.25 2.79 0.90 1.36 0.47 1.32 8.80 10.26 MIN 0.173 0 0.102 0.030 0.048 0.013 0.048 0.338 0.394 INCH NOM 0.180 0.004 0.106 0.343 0.4 0.1BSC 0.594 0.610 MAX 0.185 0.010 0.110 0.035 0.052 0.019 0.052 0.346 0.404 SYMBOL L L3 L1 L4 L2 MIN 2.00 1.17 - MM NOM 2.30 1.27 0.25BSC 2.50REF. 0° 5° 1° 0.05 1.40 7° 3° 0.10 1.50 8° 9° 5° 0.20 1.60 0° 5° 1° 0.002 0.055 MAX 2.60 1.40 1.70 MIN 0.079 0.046 - INCH NOM 0.090 0.050 0.01BSC 0.098REF. 7° 3° 0.004 0.059 8° 9° 5° 0.008 0.063 MAX 0.102 0.055 0.067 θ θ1 θ2 DEP Øp1 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 8 www.ruichips.com RU1H35S Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2011 9 www.ruichips.com