RU1HP40R

RU1HP40R P-Channel Advanced Power MOSFET MOSFET Features • -100V/-45A, RDS (ON) =25mΩ(tpy.)@VGS=-10V • Super High Dense Cell Design • Ultra Low On-Resistance • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications • Inverters P-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating -100 ±25 175 -55 to 175 TC=25°C -45 ① Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ -180 -45 A A ② -36 150 75 1 W °C/W Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 306 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 www.ruichips.com RU1HP40R Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TC=25°C Unless Otherwise Noted) RU1HP40R Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=-250µA VDS= -100V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±25V, VDS=0V VGS= -10V, IDS=-40A -100 -1 -30 -2 -3 -4 ±100 25 40 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=-40A, VGS=0V ISD=-40A, dlSD/dt=100A/µs 180 450 -1.2 V ns nC Ω pF Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= -50V, Frequency=1.0MHz VDD=-50V, RL=1.3Ω, IDS=-40A, VGEN=-10V, RG=6Ω 1.8 3500 370 130 23 36 131 98 ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=-80V, VGS= -10V, IDS=-40A 146 25 45 190 nC Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. ③Limited by TJmax, IAS =35A, VDD =-48V, RG = 50Ω , Starting TJ = 25°C. ④Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑤Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 2 www.ruichips.com RU1HP40R Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) -ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance -VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com -ID - Drain Current (A) RU1HP40R Typical Characteristics Output Characteristics Drain-Source On Resistance -VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage -VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU1HP40R Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) -IS - Source Current (A) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge -VDS - Drain-Source Voltage (V) -VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 5 www.ruichips.com RU1HP40R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 6 www.ruichips.com RU1HP40R Ordering and Marking Information Device RU1HP40R Marking RU1HP40R Package TO-220 Packaging Tube Quantity 50 Reel Size Tape width - Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 7 www.ruichips.com RU1HP40R Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 8 www.ruichips.com RU1HP40R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. D– NOV., 2011 9 www.ruichips.com