RU2020H
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/20A, RDS (ON) =3.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.8mΩ (Typ.) @ VGS=4.5V RDS (ON) =5.6mΩ (Typ.) @ VGS=2.5V • Super High Dense Cell Design • Low RDS(ON) • Reliable and Rugged • Lead Free and Green Available
Pin Description
SOP-8
Applications
• DC/DC Converter
Absolute Maximum Ratings
Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
N-Channel MOSFET
Rating 20 ±12 150 -55 to 150 TA=25°C 4.4
①
Unit
V °C °C A
Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=10V) TA=25°C TA=25°C TA=70°C PD RθJA
②
70
A A
20 17 3.1 2 40
Maximum Power Dissipation Thermal Resistance-Junction to Ambient
TA=25°C TA=70°C
W °C/W
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012
www.ruichips.com
RU2020H
Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS
③
(TA=25°C Unless Otherwise Noted) RU2020H Min. Typ. Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current
VGS=0V, IDS=250µA VDS=20V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±12V, VDS=0V VGS=10V, IDS=20A
20 1 30 0.5 1 1.5 ±100 3.5 3.8 5.6 5.2 6.5 9
V µA V nA mΩ mΩ mΩ
RDS(ON)
Drain-Source On-state Resistance
VGS=4.5V, IDS=16A VGS=2.5V, IDS=12A
Diode Characteristics VSD
trr Qrr
③
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
④
ISD=1A, VGS=0V ISD=10A, dlSD/dt=100A/µs 27 39 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=10V, Frequency=1.0MHz VDD=10V, RL=1Ω, IDS=10A, VGEN=4.5V, RG=6Ω 2 3680 1530 370 20 25 92 45
1
V ns nC Ω pF
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
④
ns
Gate Charge Characteristics Qg Qgs Qgd
Notes:
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing.
53 VDS=16V, VGS=4.5V, IDS=10A 11 20 nC
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012
2
www.ruichips.com
RU2020H
Typical Characteristics
Power Dissipation Drain Current
Tj - Junction Temperature (°C)
ID - Drain Current (A)
Tj - Junction Temperature (°C) Safe Operation Area
Ptot - Power (W)
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 3
Normalized Effective Transient
Square Wave Pulse Duration (sec)
www.ruichips.com
ID - Drain Current (A)
RU2020H
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
VDS - Drain-Source Voltage (V)
RDS(ON) - On Resistance (mΩ)
ID - Drain Current (A)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
VGS - Gate-Source Voltage (V)
Normalized Threshold Voltage
Tj - Junction Temperature (°C)
4
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012
RDS(ON) - On - Resistance (m)
www.ruichips.com
RU2020H
Typical Characteristics
Drain-Source On Resistance Source-Drain Diode Forward
Normalized On Resistance
Tj - Junction Temperature (°C)
IS - Source Current (A)
VSD - Source-Drain Voltage (V) Capacitance
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 5
VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
QG - Gate Charge (nC)
www.ruichips.com
RU2020H
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012
6
www.ruichips.com
RU2020H
Ordering and Marking Information
Device RU2020H Marking RU2020H Package SOP-8 Packaging Tape&Reel Quantity 2500 Reel Size 13’’ Tape width 12mm
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012
7
www.ruichips.com
RU2020H
Package Information
SOP-8
SYMBOL A A1 A2 b c D
MM MIN 1.350 0.100 1.350 0.330 0.170 4.700 MAX 1.750 0.250 1.550 0.510 0.250 5.100 MIN
INCH MAX 0.069 0.010 0.061 0.020 0.010 0.200 SYMBOL E E1 e L θ MIN 3.800 5.800 0.400 0° 0.053 0.004 0.053 0.013 0.006 0.185
MM MAX 4.000 6.200 1.270 8°
INCH MIN 0.150 0.228 0.016 0° MAX 0.157 0.244 0.050 8°
1.270 (BSC)
0.050 (BSC)
ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012
8
www.ruichips.com
RU2020H
Customer Service
Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact:
Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012
9
www.ruichips.com
很抱歉,暂时无法提供与“RU2020H”相匹配的价格&库存,您可以联系我们找货
免费人工找货