RU206B

RU206B N-Channel Advanced Power MOSFET Features Pin Description • 20V/6A, RDS (ON) =20mΩ(Typ.)@VGS=4.5V D RDS (ON) =26mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available G S SOT23 Applications • Load Switch • PWM Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 1 A TA=25°C 24 A TA=25°C 6 TA=70°C 4.8 TA=25°C 1 TA=70°C 0.64 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=4.5V) PD Maximum Power Dissipation IDP RqJC RqJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 125 °C/W TBD mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2019 1 www.ruichips.com RU206B Electrical Characteristics (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU206B Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) VGS=0V, IDS=250µA V VDS=20V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±12V, VDS=0V Drain-Source On-state Resistance 20 30 0.4 - µA 1.1 V ±100 nA VGS=4.5V, IDS=6A 20 25 mΩ VGS=2.5V, IDS=5A 26 34 mΩ 1 V Diode Characteristics VSD ⑤ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs 15 ns 8 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.3 Ciss Input Capacitance VGS=0V, 585 Coss Output Capacitance 125 Crss Reverse Transfer Capacitance VDS=10V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time VDD=10V, IDS=1A, 13 td(OFF) Turn-off Delay Time VGEN=4.5V,RG=4.7Ω 31 tf ns 11 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 85 9 Turn-off Fall Time Gate Charge Characteristics pF VDS=16V, VGS=4.5V, IDS=1A 10 1.6 nC 3.4 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2019 2 www.ruichips.com RU206B Typical Characteristics VGS=10V RDS(ON) limited Ids=6A 10µs 100µs 1ms 10ms DC TA=25°C Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse Single Pulse RθJA=125°C/W Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2019 4 www.ruichips.com RU206B Typical Characteristics 4V 4.5V 3.5V 2.5V 2.5V 1.5V 4.5V VGS=4.5V IDS=6A TJ=150°C TJ=25°C TJ=25°C Rds(on)=20mΩ VDS=16V IDS=1A Frequency=1.0MHz Ciss Coss Crss Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2019 5 www.ruichips.com RU206B Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ordering and Marking Information Device Marking Package Packaging Quantity RU206B RU206 SOT23 Tape&Reel 3000 Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2019 6 Reel Size Tape width 7’’ 8mm www.ruichips.com RU206B Package Information SOT23 D b θ L E E1 L1 0.25 C e1 A2 A A1 e Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2019 7 www.ruichips.com