RU20P17M2

RU20P17M2 P-Channel Advanced Power MOSFET Features Pin Description • -20V/-15A, RDS (ON) =16mΩ(Typ.)@VGS=-4.5V RDS (ON) =28mΩ(Typ.)@VGS=-2.5V DD D D • Super High Dense Cell Design • Reliable and Rugged • 100% Avalanche Tested • Lead Free and Green Devices Available (RoHS Compliant) S S S G PIN1 PIN1 PDFN3333 D Applications • Load Switch • Power Management • Battery Protection G S P-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±10 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C -1 A TC=25°C -60 A TC=25°C -15 TC=100°C -9.4 TA=25°C -9.3 TA=70°C -7.5 TC=25°C 31 TC=100°C 12.5 TA=25°C 3.5 TA=70°C 2.3 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=-4.5V) ② ID Continuous Drain Current@TA(VGS=-4.5V) Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA ③ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– SEPT., 2016 1 ③ A W www.ruichips.com RU20P17M2 Parameter Symbol RJC RJA ③ Rating Unit Thermal Resistance-Junction to Case 4 °C/W Thermal Resistance-Junction to Ambient 35 °C/W 20 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Test Condition Parameter RU20P17M2 Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) V VDS=-20V, VGS=0V -1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±10V, VDS=0V Drain-Source On-state Resistance -20 -30 -0.4 µA -1.1 V ±100 nA VGS=-4.5V, IDS=-8A 16 20 mΩ VGS=-2.5V, IDS=-6A 28 35 mΩ -1.4 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=-8A, VGS=0V ISD=-15A, dlSD/dt=100A/µs 17 ns 23 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.9 Ciss Input Capacitance 640 Coss Output Capacitance Crss VGS=0V, VDS=-10V, Frequency=1.0MHz Reverse Transfer Capacitance 65 td(ON) Turn-on Delay Time 9 tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time VDD=-10V,IDS=-15A, VGEN=-4.5V,RG=6Ω Turn-off Fall Time 135 16 45 pF ns 21 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=-16V, VGS=-10V, IDS=-15A Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– SEPT., 2016 10 2 nC 3 2 www.ruichips.com RU20P17M2 Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, IAS=-9A,VDD=-16V,RG=50Ω,Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RU20P17M2 20P17 PDFN3333 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– SEPT., 2016 Packaging Quantity Reel Size Tape width Tape&Reel 3 5000 13'' 12mm www.ruichips.com RU20P17M2 Typical Characteristics Power Dissipation 35 14 -ID - Drain Current (A) 30 PD - Power (W) Drain Current 16 25 20 15 10 5 12 10 0 8 6 4 2 VGS=-10V 0 0 25 50 75 100 125 150 25 50 Safe Operation Area RDS(ON) limited -ID - Drain Current (A) 1000 100 10 10µs 100µs 1ms 10ms DC 1 0.1 TC=25°C 0.01 0.01 0.1 1 10 100 100 125 150 TJ - Junction Temperature (°C) RDS(ON) - On - Resistance (mΩ) TJ - Junction Temperature (°C) 75 Drain Current 50 Ids=-8A 40 30 20 10 0 0 1000 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 100 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 10 1 Single Pulse 0.1 RθJC=4°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– SEPT., 2016 4 www.ruichips.com RU20P17M2 Typical Characteristics Output Characteristics -4.5V 20 -3.5V 15 -3V 10 -2.5V 5 -1V 0 0 1 2 3 4 Drain-Source On Resistance 50 5 RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 25 40 -2.5V 30 -4.5V 20 10 0 0 5 10 -VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=16mΩ 10 -25 0 25 50 75 100 125 TJ=25°C 0.1 0.2 150 0.4 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 800 600 Ciss 400 Coss Crss 1 10 -VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– SEPT., 2016 5 0.8 1 1.2 1.4 Gate Charge 1000 0 0.6 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 200 30 TJ=150°C 1 0.0 -50 25 Source-Drain Diode Forward 100 VGS=-4.5V IDS=-8A 0.5 20 -ID - Drain Current (A) -IS - Source Current (A) Normalized On Resistance 2.5 15 100 5 VDS=-16V IDS=-15A 4 3 2 1 0 0 2 4 6 8 10 QG - Gate Charge (nC) www.ruichips.com RU20P17M2 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– SEPT., 2016 6 www.ruichips.com RU20P17M2 Package Information PDFN3333 b C L M D 1 D 3 D 2 D 1 L 2 E e H A ︶ 4 . 0 ︵ e c n ne r r e e t f t e a PR r do nf al y Ln O θ 1 EE 0 6 . 0 5 6 . 0 2 7 . 0 5 5 . 3 8 9 . 1 5 2 . 0 0 8 . 2 SYMBOL A b c D D1 D2 D3 E MM MIN 0.70 0.25 0.10 3.25 3.00 1.78 * 3.20 NOM 0.75 0.30 0.15 3.35 3.10 1.88 0.13 3.30 INCH MAX 0.80 0.35 0.25 3.45 3.20 1.98 * 3.40 MIN 0.028 0.010 0.004 0.128 0.118 0.070 * 0.126 NOM 0.030 0.012 0.007 0.132 0.122 0.074 0.005 0.130 MAX 0.031 0.014 0.010 0.136 0.126 0.078 * 0.134 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– SEPT., 2016 7 SYMBOL E1 E2 e H L L1 θ M MM MIN 3.00 2.39 0.30 0.30 * * * NOM 3.15 2.49 0.65BSC 0.40 0.40 0.13 10° * INCH MAX 3.20 2.59 0.50 0.50 * 12° 0.15 MIN 0.118 0.094 NOM 0.122 0.098 0.026BSC 0.012 0.016 0.012 0.016 * 0.005 * 10° * * MAX 0.126 0.102 0.020 0.020 * 12° 0.006 www.ruichips.com RU20P17M2 Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– SEPT., 2016 8 www.ruichips.com