RU20P3B

RU20P3B P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -20V/-3A, RDS (ON) =80mΩ (Typ.) @ VGS=-4.5V RDS (ON) =110mΩ (Typ.) @ VGS=-2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged SOT-23 • Lead Free and Green Available Applications • Power Management • Load Switch Absolute Maximum Ratings Symbol P-Channel MOSFET Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -1.2 A TA=25°C -12 TA=25°C -3 TA=70°C -2.3 TA=25°C 1 TA=70°C 0.64 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=-4.5V) PD RθJA ② Maximum Power Dissipation Thermal Resistance-Junction to Ambient Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 ① A A 125 W °C/W www.ruichips.com RU20P3B Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU20P3B Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ VGS=0V, IDS=-250µA V -20 VDS=-20V, VGS=0V -1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±12V, VDS=0V -30 -0.5 - µA -1 V ±100 nA VGS=-4.5V, IDS=-3A 80 100 mΩ VGS=-2.5V, IDS=-2A 110 150 mΩ -1.2 V Drain-Source On-state Resistance Diode Characteristics VSD ③ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=-1A, VGS=0V ISD=-3A, dlSD/dt=100A/µs 13 ns 6 nC 2 Ω ④ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=-10V, Frequency=1.0MHz 480 120 pF 40 8 VDD=-10V, RL=3Ω, IDS=-3A, VGEN=-4.5V, RG=6Ω Turn-off Fall Time 13 ns 25 12 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 7 VDS=-16V, VGS=-4.5V, IDS=-3A 1.5 nC 2.5 Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on the user's specific board design. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 2 www.ruichips.com RU20P3B Typical Characteristics Drain Current Ptot - Power (W) -ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area -ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance -VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU20P3B Typical Characteristics Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage -VDS - Drain-Source Voltage (V) -VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 Tj - Junction Temperature (°C) 4 www.ruichips.com RU20P3B Typical Characteristics Source-Drain Diode Forward -IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) -VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) -VGS - Gate-Source Voltage (V) Capacitance -VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 QG - Gate Charge (nC) 5 www.ruichips.com RU20P3B Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 6 www.ruichips.com RU20P3B Ordering and Marking Information ② Device Marking ① Package Packaging Quantity Reel Size Tape width RU20P3B 8XYWW SOT-23 Tape&Reel 3000 7’’ 8mm RU20P3B-G 8XYWW SOT-23 Tape&Reel 3000 7’’ 8mm ① The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week ② Device end with -G means Green Product Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 7 www.ruichips.com RU20P3B Package Information SOT-23 SYMBOL MM INCH MM SYMBOL INCH MIN MAX MIN MAX A 0.900 1.150 0.035 0.045 E1 MIN MAX MIN MAX 2.250 2.550 0.089 A1 0.000 0.100 0.000 0.004 e 0.100 A2 0.900 1.050 0.035 0.041 e1 b 0.300 0.500 0.012 0.020 L c 0.080 0.150 0.003 0.006 L1 0.300 0.500 0.012 0.020 D 2.800 3.000 0.110 0.118 θ 0° 8° 0° 8° E 1.200 1.400 0.047 0.055 0.950 TYP. 1.800 2.000 0.550 REF. 0.037 TYP. 0.071 0.079 0.022 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 8 www.ruichips.com RU20P3B Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright Ruichips Semiconductor Co., Ltd Rev. A– SEP., 2012 9 www.ruichips.com