RU20P7C

RU20P7C P-Channel Advanced Power MOSFET Features Pin Description • -20V/-5A, RDS (ON) =20mΩ(Typ.)@VGS=-4.5V RDS (ON) =30mΩ(Typ.)@VGS=-2.5V D • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 D Applications pp • Load Switch • Power Management • Battery Protection G S P Channel MOSFET P-Channel Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage g -20 VGSS Gate-Source Voltage ±16 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -1 A TA=25°C -20 A TA=25°C -5 TA=70°C -4 TA=25°C 1.3 TA=70°C 0.8 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation IDP RJC RJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 100 °C/W - mJ Drain-Source Avalanche Ratings ④ EAS Avalanche a a c e Energy, e gy, S Single g e Pulsed u sed Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2017 1 www.ruichips.com RU20P7C Electrical El t i l Characteristics Ch t i ti (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU20P7C Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) V VDS=-20V, 20V VGS=0V 0V -1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±16V, VDS=0V Drain-Source Drain Source On-state On state Resistance -20 µA -30 -0.4 -0.7 -1.1 V ±100 nA VGS=-4.5V, IDS=-5A 20 28 mΩ VGS=-2.5V, IDS=-4A 30 38 mΩ -1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=-1A, VGS=0V ISD=-5A, dlSD/dt=100A/µs 17 ns 23 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.9 Ciss Input Capacitance 640 Coss Output Capacitance VGS=0V, VDS=-10V, Frequency=1.0MHz Crss Reverse Transfer Capacitance p td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf 9 VDD=-10V, RL=3.8Ω, IDS=-5A, VGEN=-4.5V, RG=6Ω 16 ns 45 21 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 65 Turn-off Fall Time Gate Charge Characteristics pF 135 VDS=-16V, VGS=-10V, IDS=-5A 10 nC 2 3 ①Pulse width limited by safe operating area. ②Calculated ②C l l t d continuous ti currentt based b d on maximum i allowable ll bl junction j ti temperature. t t ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2017 2 www.ruichips.com RU20P7C Ordering O d i and d Marking M ki Information I f ti Device Marking① Package RU20P7C TXYWW SOT23-3 Packaging Quantity Reel Size Tape width Tape&Reel 3000 7’’ 8mm ① The following characters could be different and means: X         =Assembly site code Y         =Year WW    =Work Week Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2017 3 www.ruichips.com RU20P7C Typical Characteristics T i l Ch t i ti Power Dissipation 1 5 4 3 2 1 0 0 0 25 50 75 100 Drain Current 6 -ID - Drain Curre ent (A) PD - Powe er (W) 2 125 VGS=-4.5V 25 150 RDS(ON) lim mited -IID - Drain Current (A A) Safe Operation Area 10 1 10µs 100µs 1ms 10ms 0.1 0.01 DC TA=25°C 0.01 0.1 1 50 75 100 125 150 TJ - Junction Temperature (°C) RDS(ON) - On - Resistan nce (mΩ) TJ - Junction Temperature (°C) Drain Current 80 Ids=-5A 60 40 20 0 0 10 1 2 3 4 5 6 7 8 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJA - Therrmal Response (°C/W W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 0.1 Single Pulse RθJA=100°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2017 4 www.ruichips.com RU20P7C Typical Characteristics T i l Ch t i ti Output Characteristics -ID - Drain Cu urrent (A) -4.5V -3V 25 -2.5V 20 15 -2V 10 5 -1V 0 0 1 2 3 4 Drain-Source On Resistance 80 RDS(ON) - On Resista ance (mΩ) 30 60 -2.5V 2 5V 40 20 -4.5V 0 5 0 2 4 -VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C ( ) Rds(on)=20mΩ TJ=150°C 1 -25 0 25 50 75 100 125 TJ=25°C 0.1 0.01 0.0 -50 0.2 150 0.4 Capacitance -VGS - G Gate-Source Voltage e (V) C - Capacitance (pF F) Frequency=1 0MHz Frequency=1.0MHz 800 Ciss 400 Coss Crss 0 1 10 -VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2017 5 0.8 1 1.2 1.4 Gate Charge 1000 200 0.6 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 600 10 Source-Drain Diode Forward 10 VGS=-4.5V ID=-5A 0.5 8 -ID - Drain Current (A) -IS - Source Currentt (A) No ormalized On Resisttance 2.5 6 100 10 VDS 16V VDS=-16V IDS=-5A 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 QG - Gate Charge (nC) www.ruichips.com RU20P7C Avalanche A l h Test T t Circuit Ci it and d Waveforms W f Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2017 6 www.ruichips.com RU20P7C Package Information P k I f ti D b SOT23-3 θ 2 . 0 L 1 E E 1 e C e 1 A 2A A SYMBOL A A1 A2 b c D E E1 e e1 L θ MM MIN 1.050 0.000 1.050 0.300 0.100 2.820 1.500 2.650 1.800 0.300 0° NOM 1.150 0.050 1.100 0.400 0.150 2.920 1.600 2.800 0.950 BSC 1.900 0.450 4° INCH MAX 1.250 0.100 1.150 0.500 0.200 3.020 1.700 2.950 MIN 0.041 0.000 0.041 0.012 0.004 0.111 0.059 0.104 2.000 0.600 8° 0.071 0.012 0° Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2017 7 NOM 0.045 0.002 0.043 0.016 0.006 0.115 0.063 0.110 0.037 BSC 0.075 0.018 4° MAX 0.049 0.004 0.045 0.020 0.008 0.119 0.067 0.116 0.079 0.024 8° www.ruichips.com RU20P7C Customer Service C t S i Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) (86 755) 8311 8311-4278 4278 E-mail: Sales-SZ@ruichips.com Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2017 8 www.ruichips.com