RU2H50R

RU2H50R N-Channel Advanced Power MOSFET MOSFET Features • 200V/60A, RDS (ON) =36mΩ (Type) @ VGS=10V • Low Gate Charge • Fast Switching • 100% avalanche tested • 175°C Operating Temperature • Lead Free,RoHS compliant Pin Description TO-220 Applications • Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 200 ±25 175 -55 to 175 TC=25°C 60 ① Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 230 60 A A ② Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 45 312 156 ② W °C/W 0.48 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 140 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 www.ruichips.com RU2H50R Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TA=25°C Unless Otherwise Noted) RU2H50R Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 200V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=28A 200 1 30 2 3 4 ±100 36 43 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=28A, VGS=0V ISD=28A, dlSD/dt=100A/µs 212 980 1.2 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=50V, Frequency=1.0MHz VDD=100V, RL=35Ω, IDS=28A, VGEN= 10V, RG=6Ω 3.8 4550 620 155 18 70 56 45 Ω pF ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=160V, VGS= 10V, IDS=28A 160 29 70 208 nC Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Current limited by bond wire. Limited by TJmax, IAS =20A, VDD = 60V, RG = 47Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 2 www.ruichips.com RU2H50R Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 3 Normalized Effective Transient Square Wave Pulse Duration (sec) ID - Drain Current (A) www.ruichips.com RU2H50R Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 RDS(ON) - On - Resistance (m) www.ruichips.com RU2H50R Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 5 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU2H50R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 6 www.ruichips.com RU2H50R Ordering and Marking Information Device RU2H50R Marking RU2H50R Package TO-220 Packaging Tube Quantity 50 Reel Size Tape width - Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 7 www.ruichips.com RU2H50R Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 8 www.ruichips.com RU2H50R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 9 www.ruichips.com