RU30120L

RU30120L N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO252 Applications • DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 30 ±20 175 -55 to 175 TC=25°C 120 ① Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink I DP ID 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 480 ② ① A A W W °C/W 120 92 63 Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 125 1.2 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 400 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 www.ruichips.com RU30120L Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TC=25°C Unless Otherwise Noted) RU30120L Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS= 10V, IDS=60A VGS= 4.5V, IDS=48A 30 1 10 1 2 3 ±100 2.5 3.3 4 6 V µA V nA mΩ mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=60A, VGS=0V ISD=60A, dlSD/dt=100A/µs 45 90 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 15V, Frequency=1.0MHz VDD=15V, RL=0.3Ω, IDS=60A, VGEN= 10V, RG=4.7Ω 1.8 3170 480 265 25 106 64 36 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=24V, VGS= 10V, IDS=60A 65 15 20 nC Calculated continuous current based on maximum allowable junction temperature. Limited by bonding wire.The package limitation is 60A. Pulse width limited by safe operating area. Limited by TJmax, IAS =40A, VDD = 24V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 2 www.ruichips.com RU30120L Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 Normalized Effective Transient Square Wave Pulse Duration (sec) 3 ID - Drain Current (A) www.ruichips.com RU30120L Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) Drain-Source On Resistance RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU30120L Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) Capacitance IS - Source Current (A) VSD - Source-Drain Voltage (V) Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 5 www.ruichips.com RU30120L Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 6 www.ruichips.com RU30120L Ordering and Marking Information RU30120 Package (Available) L : TO252 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 7 www.ruichips.com RU30120L Package Information TO252-2L SYMBOL A A1 b C D D1 D2 E e MM MIN 2.200 0.000 0.660 0.460 6.500 5.100 6.000 2.186 MAX 2.400 0.127 0.860 0.580 6.700 5.460 6.200 2.386 MIN INCH MAX 0.094 0.005 0.034 0.023 0.264 0.215 0.244 0.094 SYMBOL L L1 L2 L3 L4 Φ θ h V MIN 9.800 1.400 0.600 1.100 0° 0.000 0.087 0.000 0.026 0.018 0.256 0.201 0.236 0.086 MM MAX 10.400 1.700 1.000 1.300 8° 0.300 INCH MIN 0.386 0.055 0.024 0.043 0° 0.000 MAX 0.409 0.067 0.039 0.051 8° 0.012 2.900 REF. 1.600 REF. 0.114 REF. 0.063REF. 4.830 REF. 0.190 REF. 5.350 REF. 0.211 REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 8 www.ruichips.com RU30120L Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 9 www.ruichips.com