RU3040M3

RU3040M3 N-Channel Advanced Power MOSFET Features Pin Description • 30V/40A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =6.5mΩ(Typ.)@VGS=4.5V SS • Super High Dense Cell Design • Fast Switching Speed • Low gate Charge • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) S G D D PIN1 D D D DFN3333 D Applications pp • Switching Application Systems • On Board power for server • Synchronous rectification G S N Channel MOSFET N-Channel Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage g 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 40 A TC=25°C 160 A TC=25°C 40 TC=100°C 25 TA=25°C 13 TA=70°C 11 TC=25°C 31 TC=100°C 13 TA=25°C 3.5 TA=70°C 2.3 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2021 1 A W www.ruichips.com RU3040M3 Parameter Symbol RJC RJA ③ Rating Unit Thermal Resistance-Junction to Case 4 °C/W Thermal Resistance-Junction to Ambient 35 °C/W 90 mJ Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3040M3 Min. Typ. Max. Unit Static Characteristics BVDSS IDSS µ Drain-Source Drain Source Breakdown Voltage VGS=0V,, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) V VDS=30V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance S O 30 30 0.9 µA 1.8 V ±100 nA VGS=10V,, IDS=25A 5 6.5 mΩ VGS=4.5V, IDS=20A 6.5 8 mΩ 1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=25A, VGS=0V ISD=25A, dlSD/dt=100A/µs 17 ns 9 nC 1 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 80 td(ON) Turn-on Delay Time 6 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VDD=15V, IDS=25A, VGEN=10V, RG=2.4Ω Turn-off Fall Time Gate Charge Characteristics 680 175 10 16 pF ns 4 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2021 VDS=24V, VGS=10V, IDS=25A 15 3.8 nC 5.5 2 www.ruichips.com RU3040M3 Notes: Notes ①Pulse width limited by safe operating area area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, IAS =19A, VDD = 24V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RU3040M3 RU3040 DFN3333 Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2021 Packaging Quantity Reel Size Tape width Tape&Reel 3 5000 13'' 12mm www.ruichips.com RU3040M3 Typical Characteristics T i l Ch t i ti Power Dissipation 35 40 30 35 ID - Drain Curre ent (A) PD - Powe er (W) Drain Current 45 25 30 20 25 20 15 15 10 10 5 5 VGS=10V 0 0 0 25 50 75 100 125 150 25 175 50 TJ - Junction Temperature (°C) RDS(ON) llimited ID - Drain Current (A A) 100 10 RDS(ON) - On - Resistan nce (mΩ) Safe Operation Area 1000 10µs 100µs 1ms 10ms DC 1 0.1 0.01 TC=25°C 0.01 0.1 1 10 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Current 30 Ids=25A 25 20 15 10 5 0 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Therrmal Response (°C/W W) Thermal Transient Impedance D t 05 0 Duty=0.5, 0.2, 2 0 0.1, 1 0 0.05, 05 0 0.02, 02 0 0.01, 01 Si Single l P Pulse l 10 1 0.1 Single Pulse RθJC=4°C/W 0.01 1E-05 0.0001 Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2021 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) 4 www.ruichips.com RU3040M3 Typical Characteristics T i l Ch t i ti Output Characteristics 150 RDS(ON) - On Resista ance (mΩ) ID - Drain Cu urrent (A) VGS=6,8,10V 4V 120 90 3V 60 30 2V 0 0 1 2 3 Drain-Source On Resistance 25 4 20 15 10 4.5V 5 10V 0 5 0 10 20 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C ( ) Rds(on)=5mΩ -25 0 25 50 75 100 TJ=150°C 125 0.1 0.2 150 0.4 VGS - G Gate-Source Voltage e (V) C - Capacitance (pF F) Ciss 600 400 C Coss Crss 1 10 100 1 1.2 1.4 10 VDS=24V IDS=25A 9 8 7 6 5 4 3 2 1 0 0 VDS - Drain-Source Voltage (V) Ruichips Semiconductor Co Co., Ltd Rev. A– MAR., 2021 0.8 Gate Charge Frequency=1.0MHz q y 0 0.6 VSD - Source-Drain Voltage (V) Capacitance 1000 200 TJ=25°C 1 TJ - Junction Temperature (°C) 800 60 10 0.0 -50 50 Source-Drain Diode Forward 100 VGS=10V IDS=25A 0.5 40 ID - Drain Current (A) IS - Source Currentt (A) No ormalized On Resisttance 2.5 30 5 10 15 QG - Gate Charge (nC) 5 www.ruichips.com RU3040M3 Avalanche A l h Test T t Circuit Ci it and d Waveforms W f Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co Co., Ltd Rev. A– MAR., 2021 6 www.ruichips.com RU3040M3 Package Information P k I f ti DFN3333 Lx8 D bx8 e E1 E 1 D1 8 PIN1 INDICATOR 0.4x8 3.1 2.5 1.8 A2 A1 0.5 A 0.5 0.65 Land Pattern (Only for Reference) SYMBOL A A1 A2 b D D1 E E1 e L MM MIN 0.700 0.000 0.250 3.000 2.350 3.000 1.650 0.370 Ruichips Semiconductor Co., Ltd Rev. A– MAR., 2021 NOM 0.750 0.020 0.203 REF. 0.300 3.150 2.400 3.150 1.700 0.650BSC 0.420 INCH MAX 0.800 0.050 0.350 3.300 2.450 3.300 1.750 0.470 7 MIN 0.028 0.000 NOM 0.030 0.001 0.008 REF. 0.010 0.012 0.118 0.124 0.093 0.094 0.118 0.124 0.065 0.067 0.026BSC 0.015 0.017 MAX 0.031 0.002 0.014 0.130 0.096 0.130 0.069 0.019 www.ruichips.com