RU3070M

RU3070M N-Channel Advanced Power MOSFET MOSFET Features • 30V/70A, RDS (ON) =3.8mΩ(tpy.)@VGS=10V RDS (ON) =5mΩ(tpy.)@VGS=4.5V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) Pin Description PDFN 5X6 Applications • DC/DC Conversion • Switching Application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 30 ±20 150 -55 to 150 TC=25°C 50 ② Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink I DP 300μs Pulse Drain Current Tested TC=25°C TC=25°C ID Continuous Drain Current(VGS=10V) TC=100°C TA=25°C TA=70°C TC=25°C PD Maximum Power Dissipation TC=100°C TA=25°C TA=70°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 280 70 A A ① ① ③ 52 23 18③ 52 21 4.2 2.7 ③ ③ W www.ruichips.com RU3070M Mounted on Large Heat Sink RθJC RθJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 2.4 30 °C/W °C/W Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed 210 mJ Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ⑤ (TC=25°C Unless Otherwise Noted) RU3070M Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, VDS=0V VGS=10V, IDS=20A VGS=4.5V, IDS=20A 30 1 30 1 2.5 ±100 3.8 5 5 8 V µA V nA mΩ mΩ Diode Characteristics VSD trr Qrr ⑤ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑥ ISD=20A, VGS=0V ISD=20A, dlSD/dt=100A/µs 30 34 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω 1.8 3270 580 285 8 12 35 9 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑥ ns Gate Charge Characteristics Qg Qgs Qgd Total Gate Charge 60 VDS=24V, VGS=10V, IDS=20A 15 22 nC Gate-Source Charge Gate-Drain Charge Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 2 www.ruichips.com RU3070M Notes: ① Max current is limited to 50A by the package. ② Pulse width limited by safe operating area. When mounted on 1 inch square copper board, t ≤10sec. ④ Limited by TJmax, IAS =29A, VDD =24V, RG = 50Ω , Starting TJ = 25°C. ⑤ Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑥ Guaranteed by design, not subject to production testing . Ordering and Marking Information Device RU3070M Marking RU3070M Package PDFN 5X6 Packaging Tape&Reel Quantity 3000 Reel Size 13’’ Tape width 12mm Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 3 www.ruichips.com RU3070M Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 4 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com ID - Drain Current (A) RU3070M Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 5 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 RDS(ON) - On - Resistance (m) www.ruichips.com RU3070M Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) IS - Source Current (A) VSD - Source-Drain Voltage (V) Capacitance Gate Charge VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 6 VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU3070M Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 7 www.ruichips.com RU3070M Package Information PDFN 5X6 SYMBOL A b C D D1 D2 E E1 MM MIN 1.030 0.340 0.824 4.800 4.110 4.800 5.950 5.650 MAX 1.170 0.480 0.970 5.400 4.310 5.000 6.150 5.850 MIN INCH MAX 0.046 0.019 0.038 0.213 0.170 0.197 0.242 0.230 SYMBOL E2 e L L1 L2 H I MIN 1.600 0.050 0.380 0.380 3.500 0.040 0.013 0.032 0.189 0.162 0.189 0.234 0.222 MM MAX 0.250 0.500 0.500 3.700 0.180 INCH MIN 0.063 0.002 0.015 0.015 0.138 MAX 0.010 0.020 0.020 0.146 0.007 1.270 BSC 0.050 BSC ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 8 www.ruichips.com RU3070M Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2012 9 www.ruichips.com