RU3070M2

RU3070M2 N-Channel Advanced Power MOSFET Features Pin Description • 30V/70A, D D D D RDS (ON) =3mΩ(Typ.)@VGS=10V RDS (ON) =3.6mΩ(Typ.)@VGS=4.5V • Fast Switching Speed • Low gate Charge • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) S G SS PIN1 PIN1 PDFN3333 D Applications • Switching Application Systems G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 20 A TC=25°C 250 A TC=25°C 70 TC=100°C 45 TA=25°C 20 TA=70°C 16 TC=25°C 45 TC=100°C 18 TA=25°C 3.6 TA=70°C 2.3 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA ③ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– July., 2017 1 A W www.ruichips.com RU3070M2 Symbol RqJC RqJA ③ Parameter Rating Unit Thermal Resistance-Junction to Case 2.8 °C/W Thermal Resistance-Junction to Ambient 35 °C/W 156 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3070M2 Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) VGS=0V, IDS=250µA V VDS=30V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 30 30 1 µA 2 V ±100 nA VGS=10V, IDS=20A 3 3.6 mΩ VGS=4.5V, IDS=16A 3.6 4.2 mΩ 1.2 V Diode Characteristics VSD ⑤ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=20A, VGS=0V ISD=20A, dlSD/dt=100A/µs 30 ns 34 nC 1.8 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance VGS=0V, 3270 Coss Output Capacitance 580 Crss Reverse Transfer Capacitance VDS=15V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time VDD=15V, IDS=20A, 12 td(OFF) Turn-off Delay Time VGEN=10V, RG=3Ω 35 tf 285 8 Turn-off Fall Time Gate Charge Characteristics pF ns 9 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=24V, VGS=10V, IDS=20A Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– July., 2017 2 60 15 nC 22 www.ruichips.com RU3070M2 Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. The package limitation current is 40A. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, IAS =25A, VDD = 24V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RU3070M2 RU3070 PDFN3333 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– July., 2017 Packaging Quantity Reel Size Tape width Tape&Reel 3 5000 13'' 12mm www.ruichips.com RU3070M2 Typical Characteristics VGS=10V RDS(ON) limited Ids=20A DC 10µs 100µs 1ms 10ms TC=25°C Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse Single Pulse Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– July., 2017 4 RθJC=2.8°C/W www.ruichips.com RU3070M2 Typical Characteristics VGS=6,8,10V 4V 4.5V 3V 10V VGS=10V IDS=20A TJ=150°C TJ=25°C TJ=25°C Rds(on)=3mΩ Frequency=1.0MHz Ciss VDS=24V IDS=20A Coss Crss Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– July., 2017 5 www.ruichips.com RU3070M2 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– July., 2017 6 www.ruichips.com RU3070M2 Package Information PDFN3333 C D2 M D3 D1 D L b A H L1 e E2 θ Land Pattern ( Only for Reference ) 0.60 0.4 0.72 E1 E 0.25 1.98 3.55 0.65 2.80 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– July., 2017 7 www.ruichips.com