RU307C

RU307C N-Channel Advanced Power MOSFET Features Pin Description • 30V/6A, RDS (ON) =18mΩ(Typ.)@VGS=10V RDS (ON) =28mΩ(Typ.)@VGS=4.5V D • Low RDS (ON) • Super High Dense Cell Design R li bl and dR Rugged d • Reliable • Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 D pp Applications • Load Switch • Power Management • Battery Protection G S N Channel MOSFET N-Channel Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage g 30 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C 1 A TA=25°C 24 A TA=25°C 6 TA=70°C 4.5 TA=25°C 1.25 TA=70°C 0.75 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation IDP RJC RJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 100 °C/W TBD mJ Drain-Source Avalanche Ratings ④ EAS Avalanche a a c e Energy, e gy, S Single g e Pulsed u sed Shenzhen City Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2020 1 www.ruichips.com RU307C Electrical El t i l Characteristics Ch t i ti (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU307C Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) V VDS=30V, 30V VGS=0V 0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±12V, VDS=0V Drain-Source On-state Resistance 30 µA 30 0.7 1 1.8 V ±100 nA VGS=10V, IDS=6A 18 25 mΩ VGS=4.5V, 4 5V IDS=5A 5A 28 35 3 mΩ Ω 1 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=1A, VGS=0V ISD=1A, dlSD/dt=100A/µs 17 ns 8 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.5 Ciss Input Capacitance 610 Coss Output Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 90 td(ON) Turn-on Delay Time 9 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics 16 ns 34 13 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=15V, IDS=6A, VGEN=10V,RG=4.7Ω pF 130 VDS=24V, VGS=10V, IDS=6A 12 nC 1.9 3.7 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Shenzhen City Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2020 2 www.ruichips.com RU307C Typical Characteristics T i l Ch t i ti Power Dissipation 1.4 ID - Drain Curre ent (A) 1.2 PD - Powe er (W) Drain Current 6.0 1.0 0.8 0.6 0.4 0.2 5.0 4.0 3.0 2.0 1.0 VGS=4.5V 0.0 0.0 0 25 50 75 100 125 150 175 25 RDS(ON) limited ID - Drain Current (A A) Safe Operation Area 10 1µs 100µs 1 1ms DC 10ms 0.1 0.01 TA=25°C 0.01 0.1 1 10 50 75 100 125 150 175 TJ - Junction Temperature (°C) RDS(ON) - On - Resistan nce (mΩ) TJ - Junction Temperature (°C) Drain Current 50 Ids=6A 40 30 20 10 0 0 100 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJA - Therrmal Response (°C/W W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 0.1 Single Pulse RθJA=100°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2020 3 www.ruichips.com RU307C Typical Characteristics T i l Ch t i ti Output Characteristics 6V 10V 25 5V 4V 20 15 3V 10 5 2V 0 0 1 2 3 4 Drain-Source On Resistance 50 RDS(ON) - On Resista ance (mΩ) ID - Drain Cu urrent (A) 30 40 4.5V 30 20 10V 10 0 5 0 2 4 VDS - Drain-Source Voltage (V) -IS - Source Currentt (A) ID, D Drain-Source Current (A) 16 TJ=125°C TJ=25°C 8 4 1 TJ=150°C 1 2 3 4 TJ=25°C 0.1 0.01 0 0 0.2 5 0.4 Capacitance VGS - G Gate-Source Voltage e (V) C - Capacitance (pF F) Frequency=1 0MHz Frequency=1.0MHz 800 Ciss 600 400 Coss Crss 1 10 VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2020 4 0.8 1 1.2 1.4 Gate Charge 1000 0 0.6 VSD - Source-Drain Voltage (V) VGS, Gate -Source Voltage (V) 200 10 Source-Drain Diode Forward 10 20 12 8 ID - Drain Current (A) Transfer Characteristics 24 6 100 10 VDS 24V VDS=24V IDS=6A 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 QG - Gate Charge (nC) www.ruichips.com RU307C Avalanche A l h Test T t Circuit Ci it and d Waveforms W f Switching Time Test Circuit and Waveforms Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU307C RU307 SOT23-3 Tape&Reel 3000 7’’ 8mm Shenzhen City Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2020 5 www.ruichips.com RU307C Package Information P k I f ti Db SOT23-3 θ 5 2 . 0 1 L 1 E E L C e 1 e 1 A 2A A SYMBOL A A1 A2 b c D E E1 e e1 L θ MM MIN 0.950 0.000 0.900 0.300 0.080 2.800 1.500 2.650 1.800 0.300 0° NOM 1.150 * 1.100 0.400 0.150 2.925 1.600 2.800 0.950 BSC 1.900 0.450 4° INCH MAX 1.450 0.150 1.300 0.500 0.200 3.050 1.750 3.000 MIN 0.037 0.000 0.035 0.012 0.003 0.110 0.059 0.104 2.000 0.600 8° 0.071 0.012 0° Shenzhen City Ruichips Semiconductor Co., Ltd Rev. B– NOV., 2020 6 NOM 0.045 * 0.043 0.016 0.006 0.115 0.063 0.110 0.037 BSC 0.075 0.018 4° MAX 0.057 0.006 0.051 0.020 0.008 0.120 0.069 0.118 0.079 0.024 8° www.ruichips.com