RU3089M-C

RU3089M N-Channel Advanced Power MOSFET Features Pin Description • 30V/90A, RDS (ON) =2.4mΩ(Typ.)@VGS=10V RDS (ON) =3mΩ(Typ.)@VGS=4.5V D D D D • Ultra Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) S G SS PIN1 PIN1 PDFN5060 D Applications • DC/DC Converters • Load switch • Synchronous rectification G S N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 50 A TC=25°C 360 A TC=25°C 90 TC=100°C 57 TA=25°C 28 TA=70°C 21 TC=25°C 52 TC=100°C 20 TA=25°C 4.2 TA=70°C 2.7 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA ③ Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 1 A W www.ruichips.com RU3089M Parameter Symbol RJC RJA ③ Rating Unit Thermal Resistance-Junction to Case 2.4 °C/W Thermal Resistance-Junction to Ambient 30 °C/W 196 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Test Condition Parameter RU3089M Min. Typ. Max. Unit Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)⑤ Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current V VDS=30V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 30 30 1 µA 2.5 V ±100 nA VGS=4.5V, IDS=35A 3 4 mΩ VGS=10V, IDS=50A 2.4 3 mΩ 1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 36 ns 45 nC 1.3 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss VGS=0V, VDS=15V, Frequency=1.0MHz Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time 3680 1280 pF 190 9 VDD=15V,IDS=20A, VGEN=10V,RG=4.7Ω Turn-off Fall Time 14 37 ns 11 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=24V, VGS=10V, IDS=20A Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 68 19 nC 25 2 www.ruichips.com RU3089M Notes: ① ② ③ ④ ⑤ ⑥ Max current is limited to 50A by the package. Pulse width limited by safe operating area. When mounted on 1 inch square copper board, t 10sec. Limited by TJmax, IAS =28A, VDD =24V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width300s, duty cycle2%. Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RU3089M RU3089M PDFN5060 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 Packaging Quantity Reel Size Tape width Tape&Reel 3 3000 13'' 12mm www.ruichips.com RU3089M Typical Characteristics Power Dissipation Drain Current 120 100 50 ID - Drain Current (A) PD - Power (W) 60 40 30 20 10 80 60 40 20 VGS=10V 0 0 0 25 50 75 100 125 25 150 50 RDS(ON) limited ID - Drain Current (A) 10 RDS(ON) - On - Resistance (mΩ) Safe Operation Area 100 10µs 100µs 1ms 10ms DC 1 TC=25°C 0.1 0.01 0.1 1 10 100 100 125 150 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) 1000 75 Drain Current 10 1000 Ids=50A 8 6 4 2 0 0 VDS - Drain-Source Voltage (V) 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=2.4°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 4 www.ruichips.com RU3089M Typical Characteristics Output Characteristics Vgs=8,9,10V 240 5V 180 3V 120 60 2V 0 0 1 2 3 4 Drain-Source On Resistance 8 5 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 300 6 4 10V 2 0 0 15 30 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=2.4mΩ -25 0 25 50 75 100 125 TJ=150°C 0.1 0.2 150 0.4 VGS - Gate-Source Voltage (V) C - Capacitance (pF) Ciss 3000 Coss 1000 Crss 1 10 VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 5 0.8 1 1.2 1.4 Gate Charge Frequency=1.0MHz 0 0.6 VSD - Source-Drain Voltage (V) Capacitance 5000 2000 TJ=25°C 1 TJ - Junction Temperature (°C) 4000 90 10 0.0 -50 75 Source-Drain Diode Forward 100 VGS=10V IDS=50A 0.5 60 ID - Drain Current (A) IS - Source Current (A) Normalized On Resistance 2.5 45 100 10 VDS=24V IDS=20A 9 8 7 6 5 4 3 2 1 0 0 20 40 60 80 QG - Gate Charge (nC) www.ruichips.com RU3089M Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 6 www.ruichips.com RU3089M Package Information 2 D C F E R 4 0 . 0 PDFN5060 H F E R 0 2 . 1 2 E E 1 E K 1 L L 1 L b e A n r e t t a P d n a L a e c n e r e f e R r o f y l n O ︵ ︶ 1 D 2 5 1 . 4 8 . 3 2 3 . 4 1 6 . 6 1 9 . 3 1 6 . 0 SYMBOL A b c D1 D2 E E1 E2 e H k L L1 a MM MIN 0.90 0.33 0.20 4.80 3.61 5.90 5.65 3.38 0.41 1.10 0.51 0.06 0° NOM 1.00 0.42 0.25 4.90 3.79 6.00 5.75 3.58 1.27 BSC 0.51 0.61 0.13 2 7 4 2 . . 4 1 7 2 . 1 INCH MAX 1.10 0.51 0.30 5.00 3.96 6.10 5.85 3.78 MIN 0.035 0.013 0.008 0.189 0.142 0.232 0.222 0.133 0.61 0.016 0.043 0.020 0.002 0° 0.71 0.20 12° Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 7 NOM 0.039 0.017 0.010 0.193 0.149 0.236 0.226 0.141 0.005 BSC 0.020 0.024 0.005 MAX 0.043 0.020 0.012 0.197 0.156 0.240 0.230 0.149 0.024 0.028 0.008 12° www.ruichips.com RU3089M Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com ShenZhen City Ruichips Semiconductor CO.,LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– FEB., 2017 8 www.ruichips.com