RU3091M
N-Channel Advanced Power MOSFET
Features
Pin Description
• 30V/90A,
D D
D
D
RDS (ON) =2.8mΩ(Typ.)@VGS=10V
RDS (ON) =3.4mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• Fast Switching Speed
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
S G
SS
PIN1
PIN1
PDFN5060
D
Applications
• DC/DC Converters
• Load switch
• Synchronous rectification
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
50
A
TC=25°C
360
A
TC=25°C
90
TC=100°C
57
TA=25°C
28
TA=70°C
21
TC=25°C
54
TC=100°C
22
TA=25°C
4.2
TA=70°C
2.7
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
V
Mounted on Large Heat Sink
IDP
①
300μs Pulse Drain Current Tested
Continuous Drain Current@TC(VGS=10V)
②
ID
③
Continuous Drain Current@TA(VGS=10V)
Maximum Power Dissipation@TC
PD
Maximum Power Dissipation@TA
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
③
1
A
W
www.ruichips.com
RU3091M
Symbol
RqJC
RqJA
③
Parameter
Rating
Unit
Thermal Resistance-Junction to Case
2.3
°C/W
Thermal Resistance-Junction to Ambient
30
°C/W
156
mJ
Drain-Source Avalanche Ratings
EAS
④
Avalanche Energy, Single Pulsed
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU3091M
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
⑤
RDS(ON)
VGS=0V, IDS=250µA
V
1
VDS=30V, VGS=0V
TJ=125°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
30
30
1
µA
2.5
V
±100
nA
VGS=4.5V, IDS=35A
3.4
4.5
mΩ
VGS=10V, IDS=50A
2.8
3.5
mΩ
1.2
V
Diode Characteristics
VSD
⑤
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=50A, VGS=0V
ISD=50A, dlSD/dt=100A/µs
30
ns
36
nC
1.3
Ω
⑥
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
VGS=0V,
3280
Coss
Output Capacitance
580
Crss
Reverse Transfer Capacitance
VDS=15V,
Frequency=1.0MHz
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
VDD=15V,IDS=20A,
12
td(OFF)
Turn-off Delay Time
VGEN=10V,RG=4.7Ω
35
tf
290
8
Turn-off Fall Time
Gate Charge Characteristics
pF
ns
9
⑥
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
VDS=24V, VGS=10V,
IDS=20A
2
60
15
nC
22
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RU3091M
Notes:
①
②
③
④
⑤
⑥
Max current is limited to 50A by the package.
Pulse width limited by safe operating area.
When mounted on 1 inch square copper board, t 10sec.
Limited by TJmax, IAS =25A, VDD =24V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width300s, duty cycle2%.
Guaranteed by design, not subject to production testing.
Ordering and Marking Information
Device
Marking
Package
RU3091M
RU3091M
PDFN5060
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
Packaging Quantity Reel Size Tape width
Tape&Reel
3
3000
13''
12mm
www.ruichips.com
RU3091M
Typical Characteristics
VGS=10V
RDS(ON) limited
Ids=50A
DC
10µs
100µs
1ms
10ms
TC=25°C
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
Single Pulse
RθJC=2.3°C/W
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
4
www.ruichips.com
RU3091M
Typical Characteristics
Vgs=8,9,10V
5V
3V
10V
2V
VGS=10V
IDS=50A
TJ=150°C
TJ=25°C
TJ=25°C
Rds(on)=2.8mΩ
VDS=24V
IDS=50A
Frequency=1.0MHz
Ciss
Coss
Crss
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
5
www.ruichips.com
RU3091M
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
6
www.ruichips.com
RU3091M
Package Information
PDFN5060
D2
0.04R E F
H
C
L
K
E
E1
E2
1.20R E F
L1
L1
A
e
b
a
Land P attern
( O nly for R eference)
4.32
6.61
3.81
4.52
D1
3.91
1.27
0.61
1.27
4.42
Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2016
7
www.ruichips.com