RU30J30M

RU30J30M Dual N-Channel Advanced Power MOSFET Features Pin Description • 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V RDS (ON) =9.5mΩ(Typ.)@VGS=4.5V G2 • Fast Switching Speed • Low gate Charge • 100% avalanche tested • Lead Free and Green Devices Available (RoHS Compliant) S2 S2 S2 G1 D1 D1 D1 PIN1 PDFN5*6 Applications • Switching Application Systems • DC/DC Converters Dual N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 20 A TC=25°C 120 A TC=25°C 30 TC=100°C 19 TA=25°C 10 TA=70°C 8 TC=25°C 29 TC=100°C 12 TA=25°C 3.1 TA=70°C 2 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=4.5V) ② ID Continuous Drain Current@TA(VGS=4.5V) ③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 1 A W www.ruichips.com RU30J30M Parameter Symbol RJC RJA ③ Rating Unit Thermal Resistance-Junction to Case 4.2 °C/W Thermal Resistance-Junction to Ambient 40 °C/W 49 mJ Drain-Source Avalanche Ratings ④ EAS Avalanche Energy, Single Pulsed Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30J30M Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) Drain-Source Breakdown Voltage VGS=0V, IDS=250µA ⑤ V VDS=30V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 30 30 1.2 µA 2.5 V ±100 nA VGS=10V, IDS=20A 7 9 mΩ VGS=4.5V, IDS=16A 9.5 12 mΩ 1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=20A, VGS=0V ISD=20A, dlSD/dt=100A/µs 15 ns 8 nC 1 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 75 td(ON) Turn-on Delay Time 5 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VDD=15V, RL=0.75Ω, IDS=20A, VGEN=10V, RG=3Ω Turn-off Fall Time Gate Charge Characteristics 670 180 10 15 pF ns 4 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=24V, VGS=10V, IDS=20A Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 12 3 nC 4 2 www.ruichips.com RU30J30M Notes: ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. ④Limited by TJmax, IAS =14A, VDD = 24V, RG = 50Ω, Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package RU30J30M RU30J30M PDFN5060 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 Packaging Quantity Reel Size Tape width Tape&Reel 3 3000 13'' 12mm www.ruichips.com RU30J30M Typical Characteristics Power Dissipation 35 30 25 ID - Drain Current (A) PD - Power (W) Drain Current 30 25 20 20 15 15 10 10 5 0 5 VGS=10V 0 0 25 50 75 100 125 150 25 50 Safe Operation Area RDS(ON) limited ID - Drain Current (A) 1000 100 10 10µs 100µs 1ms 10ms DC 1 0.1 TC=25°C 0.01 0.01 0.1 1 10 100 100 125 150 TJ - Junction Temperature (°C) RDS(ON) - On - Resistance (mΩ) TJ - Junction Temperature (°C) 75 Drain Current 30 Ids=20A 25 20 15 10 5 0 0 1000 1 2 3 4 5 6 7 8 9 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 100 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 10 1 0.1 Single Pulse RθJC=4.2°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 4 www.ruichips.com RU30J30M Typical Characteristics Output Characteristics 6V ID - Drain Current (A) 10V 90 5V 60 3V 30 2V 0 0 1 2 3 4 Drain-Source On Resistance 30 5 RDS(ON) - On Resistance (mΩ) 120 25 20 15 4.5V 10 5 10V 0 0 10 20 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=7mΩ -25 0 25 50 75 100 125 TJ=150°C 0.1 0.2 150 0.4 VGS - Gate-Source Voltage (V) C - Capacitance (pF) 800 Ciss 600 400 Coss Crss 10 VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 5 0.8 1 1.2 1.4 Gate Charge Frequency=1.0MHz 1 0.6 VSD - Source-Drain Voltage (V) Capacitance 1000 0 TJ=25°C 1 TJ - Junction Temperature (°C) 200 60 10 0.0 -50 50 Source-Drain Diode Forward 100 VGS=10V ID=20A 0.5 40 ID - Drain Current (A) IS - Source Current (A) Normalized On Resistance 2.5 30 100 10 VDS=24V IDS=20A 9 8 7 6 5 4 3 2 1 0 0 3 6 9 12 QG - Gate Charge (nC) www.ruichips.com RU30J30M Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 6 www.ruichips.com RU30J30M Package Information PDFN5060 A b e 6 5 8 L1 7 L1 7 5 2 1 E2 0R EF H I Ø1 .2 J E1 E 6 D2 k 8 L C 1 2 3 4 4 F a 0.71 a 3 3.96 8 1. 27 6 5 0. 61 2.22 D1 7 0 1.09 1.95 1 A b c D1 D2 L1 E K I MM MIN 0.90 0.33 0.20 4.80 3.61 0.06 5.90 0.50 1.22 NOM 1.00 0.41 0.25 4.90 3.81 0.13 6.00 * 1.32 INCH MAX 1.10 0.51 0.30 5.00 3.96 0.20 6.10 * 1.42 MIN 0.035 0.013 0.008 0.189 0.142 0.002 0.232 0.019 0.048 NOM 0.039 0.016 0.010 0.193 0.150 0.005 0.236 * 0.051 MAX 0.043 0.020 0.012 0.197 0.156 0.008 0.240 * 0.055 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 7 SYMBOL E1 E2 e H L @ J F MM MIN 5.70 2.02 3.05 4 2.92 1.20 SYMBOL 3 2 0.79 2.26 INCH MAX 5.80 2.32 MIN 0.224 0.079 0.48 0.51 NOM 5.75 2.17 1.27BSC 0.58 0.61 MAX 0.228 0.091 0.018 0.020 NOM 0.226 0.085 0.05BSC 0.022 0.024 0.68 0.71 0° 0.40 2.87 * 0.50 3.07 12° 0.60 3.22 * 0.015 0.112 10° 0.019 0.12 12° 0.023 0.126 0.026 0.028 www.ruichips.com RU30J30M Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– NOV., 2017 8 www.ruichips.com