RU30L30M

RU30L30M P-Channel Advanced Power MOSFET MOSFET Features Pin Description • -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • 100% avalanche tested PDFN3333 • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management • Load Switching Absolute Maximum Ratings Symbol P-Channel MOSFET Parameter Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ① TC=25°C -30 TC=25°C -96 V A Mounted on Large Heat Sink IDP ID 300μs Pulse Drain Current Tested Continuous Drain Current(VGS=-10V) -30 TC=100°C -19 TA=25°C -9.3 TA=70°C -7.5 33 Maximum Power Dissipation Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 TC=100°C A ① TC=25°C TC=25°C PD ② ① A ③ ③ W 13 ③ TA=25°C 3.5 TA=70°C 2.3 ③ www.ruichips.com RU30L30M Mounted on Large Heat Sink RθJC RθJA ③ Thermal Resistance-Junction to Case 3.8 °C/W Thermal Resistance-Junction to Ambient 35 °C/W 42 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Electrical Characteristics Symbol (TC=25°C Unless Otherwise Noted) Parameter Test Condition RU30L30M Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ⑤ VGS=0V, IDS=-250µA VDS=-30V, VGS=0V -1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance V -30 -30 -1 - µA -2.5 V ±10 µA VGS=-10V, IDS=-20A 12 20 mΩ VGS=-4.5V, IDS=-16A 20 34 mΩ -1 V Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=-1A, VGS=0V ISD=-20A, dlSD/dt=100A/µs Reverse Recovery Charge 45 ns 26 nC 1.8 Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=-15V, Frequency=1.0MHz 2300 250 pF 160 17 VDD=-15V, RL=0.75Ω, IDS=-20A, VGEN=-10V, RG=6Ω Turn-off Fall Time 32 37 ns 15 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 42 VDS=-24V, VGS=10V, IDS=-20A 9 nC 13 2 www.ruichips.com RU30L30M Notes: ① Max current is limited by the source bonding. ② Pulse width limited by safe operating area. ③ When mounted on 1 inch square copper board, t ≤10sec. ④ Limited by TJmax, IAS =13A, VDD =-24V, RG = 50Ω , Starting TJ = 25°C. ⑤ Pulse test ; Pulse width≤300µs, duty cycle≤2%. ⑥ Guaranteed by design, not subject to production testing. Ordering and Marking Information Device Marking Package Packaging Quantity Reel Size Tape width RU30L30M 30L30 PDFN3333 Tape&Reel 5000 13’’ 12mm Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 3 www.ruichips.com RU30L30M Typical Characteristics Drain Current Ptot - Power (W) -ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area -ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance -VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 Square Wave Pulse Duration (sec) 4 www.ruichips.com RU30L30M Typical Characteristics Drain-Source On Resistance -ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage -VDS - Drain-Source Voltage (V) -VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 Tj - Junction Temperature (°C) 5 www.ruichips.com RU30L30M Typical Characteristics Source-Drain Diode Forward -IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) -VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) -VGS - Gate-Source Voltage (V) Capacitance -VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 QG - Gate Charge (nC) 6 www.ruichips.com RU30L30M Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 7 www.ruichips.com RU30L30M Package Information PDFN3333 SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 0.70 0.75 0.80 0.028 0.030 0.031 b 0.25 0.30 0.35 0.010 0.012 0.014 SYMBOL MM INCH MIN NOM MAX MIN NOM MAX E1 3.00 3.15 3.20 0.118 0.124 0.126 E2 2.39 2.49 2.59 0.094 0.098 0.102 c 0.10 0.15 0.25 0.004 0.006 0.010 e D 3.25 3.35 3.45 0.128 0.132 0.136 H 0.30 0.39 0.50 0.012 0.015 0.020 D1 3.00 3.10 3.20 0.118 0.122 0.126 L 0.30 0.40 0.50 0.012 0.016 0.020 D2 1.78 1.88 1.98 0.070 0.074 0.078 L1 - 0.13 - - 0.005 - D3 - 0.13 - - 0.005 - θ - 10° 12° - 10° E 3.20 3.30 3.40 0.126 0.130 0.134 M - - 0.15 12° 0.006 Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 8 0.65BSC 0.026BSC www.ruichips.com RU30L30M Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 9 www.ruichips.com