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RU30P3B

RU30P3B

  • 厂商:

    RUICHIPS(锐骏半导体)

  • 封装:

    SOT-23

  • 描述:

    类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):3.5A;功率(Pd):1W;导通电阻(RDS(on)@Vgs,Id):80mΩ@10V,3.5A;阈值电压(Vgs(th)@Id):...

  • 数据手册
  • 价格&库存
RU30P3B 数据手册
RU30P3B P-Channel Advanced Power MOSFET Features Pin Description • -30V/-3.5A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =80mΩ(Typ.)@VGS=-4.5V D • Low On-Resistance • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G S SOT23 D Applications • Load Switch G S P-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -1 A TA=25°C -14 A TA=25°C -3.5 TA=70°C -2.8 TA=25°C 1 TA=70°C 0.64 TJ TSTG IS V Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ② Continuous Drain Current(VGS=-10V) IDP ID PD RθJC RθJA ③ Maximum Power Dissipation Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 125 °C/W TBD mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 1 www.ruichips.com RU30P3B Electrical Characteristics (TA=25°C Unless Otherwise Noted) RU30P3B Symbol Parameter Test Condition Unit Min. Typ. Max. Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current -30 V VDS=-30V, VGS=0V -1 TJ=125°C VGS(th) IGSS ⑤ RDS(ON) Gate Threshold Voltage VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance µA -30 -1 -1.6 -2.5 V ±100 nA VGS=-10V, IDS=-3.5A 50 80 mΩ VGS=-4.5V, IDS=-2.8A 80 130 mΩ -1.2 V Diode Characteristics VSD ⑤ trr Qrr Diode Forward Voltage Reverse Recovery Time ISD=-1A, VGS=0V ISD=-3.5A, dlSD/dt=100A/µs Reverse Recovery Charge Dynamic Characteristics 7 ns 3 nC Ω ⑥ RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 0.6 Ciss Input Capacitance 550 Coss Output Capacitance VGS=0V, VDS=-15V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 50 td(ON) Turn-on Delay Time 5 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg 13 ns 25 9 ⑥ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=-15V, IDS=-3.5A, VGEN=-10V,RG=6Ω pF 95 12 VDS=-24V, VGS=-10V, IDS=-3.5A nC 1.3 2.5 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 2 www.ruichips.com ℃ RU30P3B Ordering and Marking Information Device Marking① Package RU30P3B DXYWW SOT23 Packaging Quantity Reel Size Tape width Tape&Reel 3000 7’’ 8mm ① The following characters could be different and means: X =Assembly site code Y =Year WW =Work Week Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 3 www.ruichips.com ℃ RU30P3B Typical Characteristics Power Dissipation Drain Current 4 -ID - Drain Current (A) PD - Power (W) 2 1 3 2 1 VGS=-10V 0 0 0 25 50 75 100 125 150 25 175 50 150 175 RDS(ON) - On - Resistance (mΩ) 300 10µs 100µs 1ms 10ms 1 Ids=-3.5A 200 150 100 DC 0.1 0.01 125 250 RDS(ON) limited -ID - Drain Current (A) 10 100 Drain Current Safe Operation Area 100 75 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) TA=25°C 0.01 0.1 50 0 1 10 0 100 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) -VDS - Drain-Source Voltage (V) ZthJA - Thermal Response (°C/W) Thermal Transient Impedance Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 100 10 1 Single Pulse 0.1 RθJA=125°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 4 www.ruichips.com ℃ RU30P3B Typical Characteristics Output Characteristics Drain-Source On Resistance 300 -8V -10V RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) 15 250 12 -6V -4.5V 200 9 150 -3V 6 -4.5V 100 3 -1V 0 0 1 2 3 4 -10V 50 0 5 0 2 4 -VDS - Drain-Source Voltage (V) 10 Source-Drain Diode Forward 10 VGS=-10V ID=-3.5A 2.0 -IS - Source Current (A) Normalized On Resistance 8 -ID - Drain Current (A) Drain-Source On Resistance 2.5 6 1.5 1.0 0.5 TJ=25°C Rds(on)=50mΩ 1 TJ=150°C TJ=25°C 0.1 0.01 0.0 0.2 -50 -25 0 25 50 75 100 125 150 0.4 Capacitance -VGS - Gate-Source Voltage (V) C - Capacitance (pF) Frequency=1.0MHz 800 Ciss 400 Coss Crss 0 1 1 1.2 1.4 Gate Charge 1000 200 0.8 -VSD - Source-Drain Voltage (V) TJ - Junction Temperature (°C) 600 0.6 10 100 -VDS - Drain-Source Voltage (V) 10 VDS=-24V IDS=-3.5A 9 8 7 6 5 4 3 2 1 0 0 5 10 15 QG - Gate Charge (nC) Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 5 www.ruichips.com ℃ RU30P3B Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 6 www.ruichips.com ℃ RU30P3B Package Information SOT23 D b θ L E E1 L1 0.25 C e1 A2 A A1 e SYMBOL A A1 A2 b c D E E1 e e1 L L1 θ MM MIN 0.900 0.050 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.400 0° Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 NOM 1.025 0.075 0.975 0.400 0.115 2.900 1.300 2.400 0.950 TYP 1.900 0.540 REF 0.500 * INCH MAX 1.150 0.100 1.020 0.500 0.150 3.000 1.400 2.550 MIN 0.035 0.002 0.035 0.012 0.003 0.110 0.047 0.089 2.000 0.071 0.600 8° 0.016 0° 7 NOM 0.040 0.003 0.038 0.016 0.005 0.114 0.051 0.094 0.037 TYP 0.075 0.021 REF 0.018 * MAX 0.045 0.004 0.040 0.020 0.006 0.118 0.055 0.100 0.079 0.020 8° www.ruichips.com ℃ RU30P3B Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Ruichips Semiconductor Co., Ltd Rev. A– APR., 2013 8 www.ruichips.com
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