RU30P4C6
P-Channel Advanced Power MOSFET
Features
Pin Description
• -30V/-4A,
S
RDS (ON) =50mΩ(Typ.)@VGS=-10V
RDS (ON) =75mΩ(Typ.)@VGS=-4.5V
D
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
D
G
D
D
SOT23-6
D
Applications
• Load Switch
•DC/DC Converter
G
S
P-Channel MOSFET
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
-30
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
TA=25°C
-1.2
A
TA=25°C
-16
A
TA=25°C
-4
TA=70°C
-3.2
TA=25°C
1.3
TA=70°C
0.8
TJ
TSTG
IS
V
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
①
300μs Pulse Drain Current Tested
②
Continuous Drain Current(VGS=-10V)
IDP
ID
PD
RθJC
RθJA
③
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
A
W
-
°C/W
100
°C/W
TBD
mJ
Drain-Source Avalanche Ratings
EAS
④
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
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RU30P4C6
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU30P4C6
Symbol
Parameter
Test Condition
Unit
Min.
Typ.
Max.
Static Characteristics
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
Zero Gate Voltage Drain Current
-30
V
VDS=-30V, VGS=0V
-1
TJ=125°C
VGS(th)
IGSS
⑤
RDS(ON)
Gate Threshold Voltage
VDS=VGS, IDS=-250µA
Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state Resistance
µA
-30
-1
-3
V
±100
nA
VGS=-10V, IDS=-4A
50
70
mΩ
VGS=-4.5V, IDS=-3A
75
100
mΩ
-1.2
V
Diode Characteristics
VSD
⑤
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
ISD=-1A, VGS=0V
ISD=-4A, dlSD/dt=100A/µs
Reverse Recovery Charge
Dynamic Characteristics
21
ns
10
nC
1
Ω
⑥
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
Crss
Reverse Transfer Capacitance
65
td(ON)
Turn-on Delay Time
8
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
Gate Charge Characteristics
Qg
pF
130
17
ns
24
10
⑥
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
VDD=-15V, IDS=-4A,
VGEN=-10V,RG=6Ω
520
9
VDS=-24V, VGS=-10V,
IDS=-4A
nC
2.2
2.9
①Pulse width limited by safe operating area.
②Calculated continuous current based on maximum allowable junction temperature.
③When mounted on 1 inch square copper board, t≤10sec. The value in any given application
depends on the user's specific board design.
④Limited by TJmax. Starting TJ = 25°C.
⑤Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑥Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
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RU30P4C6
Ordering and Marking Information
Device
Marking①
Package
RU30P4C6
FXYWW
SOT23-6
Packaging Quantity Reel Size Tape width
Tape&Reel
3000
7’’
8mm
① The following characters could be different and means:
X
=Assembly site code
Y
=Year
WW =Work Week
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
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RU30P4C6
Typical Characteristics
Power Dissipation
Drain Current
5
4
-ID - Drain Current (A)
PD - Power (W)
2
1
3
2
1
VGS=-10V
0
0
0
25
50
75
100
125
150
25
175
50
10µs
100µs
1ms
10ms
DC
0.1
TA=25°C
0.01
150
175
Ids=-4A
150
1
0.01
125
200
RDS(ON) - On - Resistance (mΩ)
RDS(ON) limited
-ID - Drain Current (A)
10
100
Drain Current
Safe Operation Area
100
75
TJ - Junction Temperature (°C)
TJ - Junction Temperature (°C)
0.1
100
50
0
1
10
0
100
1
2
3
4
5
6
7
8
9
10
-VGS - Gate-Source Voltage (V)
-VDS - Drain-Source Voltage (V)
ZthJA - Thermal Response (°C/W)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
100
10
1
Single Pulse
0.1
RθJA=100°C/W
0.01
1E-05
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (sec)
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
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RU30P4C6
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
200
-10V
RDS(ON) - On Resistance (mΩ)
-ID - Drain Current (A)
20
-6V
-4.5V
15
150
10
-4.5V
100
-3V
5
-1V
0
0
1
2
3
4
50
-10V
0
5
0
5
-VDS - Drain-Source Voltage (V)
Source-Drain Diode Forward
10
VGS=-10V
IDS=-4A
2.0
-IS - Source Current (A)
Normalized On Resistance
15
-ID - Drain Current (A)
Drain-Source On Resistance
2.5
10
1.5
1.0
0.5
TJ=25°C
Rds(on)=50mΩ
1
TJ=150°C
TJ=25°C
0.1
0.01
0.0
0.2
-50
-25
0
25
50
75
100
125
150
0.4
Capacitance
-VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
Frequency=1.0MHz
800
Ciss
400
Coss
Crss
0
1
1
1.2
1.4
Gate Charge
1000
200
0.8
-VSD - Source-Drain Voltage (V)
TJ - Junction Temperature (°C)
600
0.6
10
100
-VDS - Drain-Source Voltage (V)
10
VDS=-24V
IDS=-4A
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
QG - Gate Charge (nC)
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
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RU30P4C6
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
6
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RU30P4C6
Package Information
D
b
SOT23-6
θ
E
E1
L
0.2
C
e1
SYMBOL
A
A1
A2
b
c
D
E
E1
e
e1
L
θ
A
A2
A1
e
MM
MIN
0.950
0.000
0.940
0.300
0.080
2.800
1.500
2.650
1.800
0.300
0°
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
INCH
NOM
1.150
0.060
1.100
0.400
0.140
2.900
1.600
2.800
0.950BSC
1.900
0.450
4°
7
MAX
1.450
0.150
1.300
0.500
0.200
3.020
1.700
2.950
MIN
0.037
0.000
0.037
0.012
0.003
0.110
0.059
0.104
2.000
0.600
8°
0.071
0.012
0°
NOM
0.045
0.002
0.044
0.016
0.006
0.114
0.063
0.110
0.037BSC
0.075
0.018
4°
MAX
0.057
0.006
0.051
0.020
0.008
0.119
0.067
0.116
0.079
0.024
8°
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RU30P4C6
Customer Service
Worldwide Sales and Service:
Sales@ruichips.com
Technical Support:
Technical@ruichips.com
Investor Relations Contacts:
Investor@ruichips.com
Marcom Contact:
Marcom@ruichips.com
Editorial Contact:
Editorial@ruichips.comm
HR Contact:
HR@ruichips.com
Legal Contact:
Legal@ruichips.com
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: Sales-SZ@ruichips.com
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
8
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