RU30P5H
P-Channel Advanced Power MOSFET
MOSFET
Features
• -30V/-5.5A, RDS (ON) =38mΩ (Typ.) @ VGS=-10V RDS (ON) =55mΩ (Typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available
Pin Description
SOP-8
Applications
• Power Management.
Absolute Maximum Ratings
Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current
P-Channel MOSFET
Rating -30 ±20 150 -55 to 150 TA=25°C -3.1
①
Unit
V °C °C A
Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TA=25°C TA=25°C TA=70°C PD RθJA
②
-22
A A
-5.5 -4.5 2.5 1.6 50
Maximum Power Dissipation Thermal Resistance-Junction to Ambient
TA=25°C TA=70°C
W °C/W
Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011
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RU30P5H
Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)
③
(TA=25°C Unless Otherwise Noted) RU30P5H Min. Typ. Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VGS=0V, IDS=-250µA VDS=-30V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V VGS=-10V, IDS=-5.2A VGS=-4.5V, IDS=-2A
-30 -1 -30 -1 -1.8 -2.5 ±100 38 55 45 75
V µA V nA mΩ mΩ
Diode Characteristics VSD
trr Qrr
③
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
④
ISD=-2A, VGS=0V ISD=-5.5A, dlSD/dt=100A/µs 12 7 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-15V, RL=2.7Ω, IDS=-5.5A, VGEN=-10V, RG=6Ω 1.1 550 90 50 8 10 28 10
-1
V ns nC Ω pF
Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
④
ns
Gate Charge Characteristics Qg Qgs Qgd
Notes:
Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=-24V, VGS=-10V, IDS=-5.5A
11 2 3
14 nC
Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on the user's specific board design. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing .
Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011
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RU30P5H
Typical Characteristics
Power Dissipation Drain Current
Tj - Junction Temperature (°C)
-ID - Drain Current (A)
Tj - Junction Temperature (°C) Safe Operation Area
Ptot - Power (W)
Thermal Transient Impedance
-VDS - Drain-Source Voltage (V)
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Normalized Effective Transient
Square Wave Pulse Duration (sec)
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-ID - Drain Current (A)
RU30P5H
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
-VDS - Drain-Source Voltage (V)
RDS(ON) - On Resistance (mΩ)
-ID - Drain Current (A)
-ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
-VGS - Gate-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011
Normalized Threshold Voltage
Tj - Junction Temperature (°C)
4
RDS(ON) - On - Resistance (m)
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RU30P5H
Typical Characteristics
Drain-Source On Resistance Source-Drain Diode Forward
Normalized On Resistance
Tj - Junction Temperature (°C)
-IS - Source Current (A)
-VSD - Source-Drain Voltage (V) Capacitance
Gate Charge
-VDS - Drain-Source Voltage (V)
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-VGS - Gate-Source Voltage (V)
C - Capacitance (pF)
QG - Gate Charge (nC)
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RU30P5H
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011
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RU30P5H
Ordering and Marking Information
RU30P5
Package (Available) H : SOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel
Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011
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RU30P5H
Package Information
SOP-8
SYMBOL A A1 A2 b c D
MM MIN 1.350 0.100 1.350 0.330 0.170 4.700 MAX 1.750 0.250 1.550 0.510 0.250 5.100 MIN
INCH MAX 0.069 0.010 0.061 0.020 0.010 0.200 SYMBOL E E1 e L θ MIN 3.800 5.800 0.400 0° 0.053 0.004 0.053 0.013 0.006 0.185
MM MAX 4.000 6.200 1.270 8°
INCH MIN 0.150 0.228 0.016 0° MAX 0.157 0.244 0.050 8°
1.270 (BSC)
0.050 (BSC)
ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011
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RU30P5H
Customer Service
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Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com
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