RU30S5H

RU30S5H P-Channel Advanced Power MOSFET MOSFET Features • -30V/-5A, RDS (ON) =38mΩ (Typ.) @ VGS=-10V RDS (ON) =56mΩ (Typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available Pin Description SOP-8 Applications • Power Management. Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS I DP ID Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Dual P-Channel MOSFET Rating -30 ±20 150 -55 to 150 TA=25°C -2.5 ① Unit V °C °C A Mounted on Large Heat Sink 300μs Pulse Drain Current Tested Continuous Drain Current TA=25°C TA=25°C TA=70°C PD RθJA ② -20 A A -5 -4.1 2 1.3 62.5 Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=70°C W °C/W Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 www.ruichips.com RU30S5H Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU30S5H Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=-250µA VDS=-30V, VGS=0V TJ=85°C VDS=VGS, IDS=-250µA VGS=±20V, VDS=0V VGS=-10V, IDS=-5A VGS=-4.5V, IDS=-2A -30 -1 -30 -1 -1.8 -2.5 ±100 38 56 50 85 V µA V nA mΩ mΩ Diode Characteristics VSD trr Qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=-2A, VGS=0V ISD=-5A, dlSD/dt=100A/µs 13 8 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz VDD=-15V, RL=3Ω, IDS=-5A, VGEN=-10V, RG=6Ω 1.2 550 90 50 8 11 29 10 -1 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=-24V, VGS=-10V, IDS=-5A 11 2 3 14 nC Pulse width limited by safe operating area. ②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on the user's specific board design. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 2 www.ruichips.com RU30S5H Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) -ID - Drain Current (A) Tj - Junction Temperature (°C) Safe Operation Area Ptot - Power (W) Thermal Transient Impedance -VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 3 Normalized Effective Transient Square Wave Pulse Duration (sec) www.ruichips.com -ID - Drain Current (A) RU30S5H Typical Characteristics Output Characteristics Drain-Source On Resistance -VDS - Drain-Source Voltage (V) RDS(ON) - On Resistance (mΩ) -ID - Drain Current (A) -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage -VGS - Gate-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 RDS(ON) - On - Resistance (m) www.ruichips.com RU30S5H Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) -IS - Source Current (A) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge -VDS - Drain-Source Voltage (V) Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 5 -VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) www.ruichips.com RU30S5H Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 6 www.ruichips.com RU30S5H Ordering and Marking Information RU30S5 Package (Available) H : SOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 7 www.ruichips.com RU30S5H Package Information SOP-8 SYMBOL A A1 A2 b c D MM MIN 1.350 0.100 1.350 0.330 0.170 4.700 MAX 1.750 0.250 1.550 0.510 0.250 5.100 MIN INCH MAX 0.069 0.010 0.061 0.020 0.010 0.200 SYMBOL E E1 e L θ MIN 3.800 5.800 0.400 0° 0.053 0.004 0.053 0.013 0.006 0.185 MM MAX 4.000 6.200 1.270 8° INCH MIN 0.150 0.228 0.016 0° MAX 0.157 0.244 0.050 8° 1.270 (BSC) 0.050 (BSC) ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 8 www.ruichips.com RU30S5H Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. B– MAY., 2011 9 www.ruichips.com