RU3415B

RU3415B P-Channel Advanced Power MOSFET Features Pin Description • -12V/-4A, RDS (ON) =28mΩ(Typ.)@VGS=-4.5V RDS (ON) =35mΩ(Typ.)@VGS=-2.5V D • Low On-Resistance • ESD protected • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) G S SOT23 Applications pp • Load Switch • Power Management • Battery Protection P-Channel P Ch l MOSFET Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage g -12 VGSS Gate-Source Voltage ±10 Maximum Junction Temperature 150 °C -55 to 150 °C TA=25°C -1 A TA=25°C -16 A TA=25°C -4 TA=70°C -3.2 TA=25°C 1.3 TA=70°C 0.8 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink ① 300μs Pulse Drain Current Tested ID ② Continuous Drain Current(VGS=-4.5V) PD Maximum Power Dissipation IDP RJC RJA ③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient A W - °C/W 125 °C/W TBD mJ Drain-Source Avalanche Ratings ④ EAS Avalanche a a c e Energy, e gy, S Single g e Pulsed u sed Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 1 www.ruichips.com RU3415B Electrical El t i l Characteristics Ch t i ti (TA=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3415B Min. Typ. -12 -16 Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) VDS=-12V, 12V VGS=0V 0V VDS=VGS, IDS=-250µA Gate Leakage Current VGS=±10V, VDS=0V Drain-Source On-state Resistance -1 TJ=125°C Gate Threshold Voltage V -30 -0.4 µA -1 V ±10 µA VGS=-4.5V, IDS=-4A 28 40 mΩ VGS=-2.5V, 2 5V IDS=-3A 3A 3 35 50 0 mΩ Ω -1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=-1A, VGS=0V ISD=-4A, dlSD/dt=100A/µs 19 ns 26 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.6 Ciss Input Capacitance 640 Coss Output Capacitance VGS=0V, VDS=-8V, Frequency=1.0MHz Crss Reverse Transfer Capacitance 75 td(ON) Turn-on Delay Time 9 tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics 16 29 pF ns 19 ⑥ Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: VDD=-8V, IDS=-4A, VGEN=-4.5V,RG=6Ω 115 VDS=-10V, VGS=-4.5V, IDS=-4A 9.5 1.8 nC 2.9 ①Pulse width limited by safe operating area. ②Calculated continuous current based on maximum allowable junction temperature temperature. ③When mounted on 1 inch square copper board, t≤10sec. The value in any given application depends on the user's specific board design. ④Limited by TJmax. Starting TJ = 25°C. ⑤Pulse test;Pulse width≤300µs, duty cycle≤2%. ⑥Guaranteed by design, not subject to production testing. Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 2 www.ruichips.com RU3415B Ordering O d i and d Marking M ki Information I f ti Device Marking Package RU3415B RU3415 SOT23 Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 Packaging Quantity Reel Size Tape&Reel 3 3000 7’’ Tape 8mm www.ruichips.com RU3415B Typical Characteristics T i l Ch t i ti Power Dissipation Drain Current 5 -ID - Drain Curre ent (A) PD - Powe er (W) 2 1 4 3 2 1 VGS=-4.5V 0 0 0 25 50 75 100 125 25 150 TJ - Junction Temperature (°C) 10 1 10µs 100µs 1ms 10ms DC 0.1 TA=25°C 25 C 0.01 0.01 0.1 1 10 75 100 125 150 Drain Current RDSS(ON) - On - Resistanc ce (mΩ) RDS(ON) limited --ID - Drain Current (A A) Safe Operation Area 50 TJ - Junction Temperature (°C) 100 Ids=-4A 80 60 40 20 100 0 0 -VDS - Drain-Source Voltage (V) 1 2 3 4 5 6 7 8 9 10 -VGS - Gate-Source Voltage (V) ZthJA - The ermal Response (°C//W) Thermal Transient Impedance D t 05 0 Duty=0.5, 0.2, 2 0 0.1, 1 0 0.05, 05 0 0.02, 02 0 0.01, 01 Si Single l P Pulse l 100 10 1 0.1 Si l P Single Pulse l RθJA=125°C/W 0.01 1E-05 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (sec) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 4 www.ruichips.com RU3415B Typical Characteristics T i l Ch t i ti Output Characteristics -4.5V -5V 16 -4V -3V 12 -2V 8 4 -1V 0 0 1 2 3 4 5 80 60 20 -4.5V 0 0 2 Drain-Source On Resistance 1.5 1.0 TJ=25°C ( ) Rds(on)=28mΩ 0.0 -50 -25 0 25 50 75 100 125 TJ=25°C 0.1 0 01 0.01 0.2 150 0.4 -VGS - Ga ate-Source Voltage (V) C - Capacitance (pF) Frequency=1 0MHz Frequency=1.0MHz Ciss 600 400 Coss Crss 1 10 -VDS - Drain-Source Voltage (V) Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 5 0.6 0.8 1 1.2 1.4 -VSD - Source-Drain Voltage (V) Gate Charge 1000 0 10 TJ=150°C Capacitance 200 8 1 TJ - Junction Temperature (°C) 800 6 Source-Drain Diode Forward 10 VGS=-4.5V ID=-4A 0.5 4 -ID - Drain Current (A) --IS - Source Current (A) No ormalized On Resisttance 2.0 -2.5V 40 -VDS - Drain-Source Voltage (V) 2.5 Drain-Source On Resistance 100 RDS(ON) - On Resistance (mΩ) -ID - Drain Cu urrent (A) 20 100 10 VDS=-10V VDS= 10V IDS=-4A 9 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 QG - Gate Charge (nC) www.ruichips.com RU3415B Avalanche A l h Test T t Circuit Ci it and d Waveforms W f Switching Time Test Circuit and Waveforms Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 6 www.ruichips.com RU3415B Package Information P k I f ti Db SOT23 θ 5 2 . 0 1 L 1 E E L C e 1 e 1 A 2A A SYMBOL A A1 A2 b c D E E1 e e1 L L1 θ MM MIN 0.900 0.050 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.400 0° NOM 1.025 0.075 0.975 0.400 0.115 2.900 1.300 2.400 0.950 TYP 1.900 0.540 REF 0.500 * INCH MAX 1.150 0.100 1.020 0.500 0.150 3.000 1.400 2.550 MIN 0.035 0.002 0.035 0.012 0.003 0.110 0.047 0.089 2.000 0.071 0.600 8° 0.016 0° Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 7 NOM 0.040 0.003 0.038 0.016 0.005 0.114 0.051 0.094 0.037 TYP 0.075 0.021 REF 0.018 * MAX 0.045 0.004 0.040 0.020 0.006 0.118 0.055 0.100 0.079 0.020 8° www.ruichips.com RU3415B Customer Service C t S i Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.comm HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD 4th Floor, Block 8, Changyuan New Material Port, Keyuan Middle Road, Science & Industry Park, Nanshan District, Shenzhen, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com @ p Shenzhen City Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2018 8 www.ruichips.com